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MOC3053SR2VM

Onsemi

MOC3053SR2VM by Onsemi

MOC3053SR2VM by Onsemi is a single optocoupler with a max on-state voltage of 2.5V and peak surge current of 1A. It operates b/w -40 to 85 °C, has an isolation voltage of 4170V, and is ideal for triggering devices in applications requiring high-voltage protection.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,812 parts In-Stock

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Vyrian

USA . 380 parts In-Stock

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Kulean Microsystems

USA . 6,123 parts In-Stock

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Problanco Electronics

Mexico . 4,839 parts In-Stock

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TANS Electronics

Latvia . 4,772 parts In-Stock

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SupplyDigital Components

Austria . 1,734 parts In-Stock

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Corphita

USA . 849 parts In-Stock

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Corohmni

South Africa . 176 parts In-Stock

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UHIMA Technologies

Türkiye . 58 parts In-Stock

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Overview

Unlock the potential of your electronic devices with the MOC3053SR2VM by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-quality optocoupler trigger devices that offer unparalleled performance and reliability. Ideal for a wide range of applications, this product provides seamless integration and precise control. Experience the value of superior engineering with the MOC3053SR2VM, providing customers with peace of mind and confidence in their projects. Elevate your electronics with Onsemi's innovative solutions today.

Feature Benefit Bullets

Maximum On State Voltage: 2.5 V

Low on-state voltage helps in reducing power consumption and heat generation, making this product energy-efficient.

Configuration: SINGLE

Single configuration simplifies the design and integration process, making it easier to use in various applications.

Peak Surge Current: 1 A

High peak surge current capability ensures reliable operation even under transient voltage conditions.

Maximum Forward Current: 0.06 A

High maximum forward current rating allows for handling higher current loads with ease.

Optoelectronic Type: TRIAC OUTPUT OPTOCOUPLER

Triac output optocoupler offers fast switching speeds and high noise immunity, making it suitable for controlling AC loads.

Maximum Operating Temperature: 85 °C

Wide operating temperature range enables the device to function in harsh environments with stability.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for use in cold environments without performance degradation.

Maximum Input Trigger Current: 0.006 A

Low input trigger current requirement ensures compatibility with a wide range of control signals.

Repetitive Off-state Voltage (Peak): 600 V

High off-state voltage rating enables the device to withstand higher voltage levels without breakdown.

Packing Method: TR

TR packing method provides convenient packaging for automated assembly processes, saving time and effort during production.

Maximum Reverse Leakage Current: 0.0001 A

Low reverse leakage current helps in maintaining the off-state isolation and prevents unintended triggering.

Minimum Peak Off-state Voltage: 600 V

High minimum off-state voltage rating ensures reliable isolation between input and output circuits.

Maximum Isolation Voltage: 4170 V

High isolation voltage rating ensures safety and protection against high voltage transients or surges.

Mounting Feature: SURFACE MOUNT

Surface mounting feature allows for easy and secure installation on PCBs, saving space and simplifying assembly.

Technical Specifications

Optocoupler Trigger Device Outputs MOC3053SR2VM attributes and parameters. Explore more Optocoupler Trigger Device Outputs devices from Onsemi

Specs

Additional Features:

IEC-60747-5-5, UL APPROVED

Configuration:

SINGLE

Maximum Forward Current:

.06 A

Maximum Input Trigger Current:

.006 A

Maximum Isolation Voltage:

4170 V

Mounting Feature:

No. of Elements:

1

Maximum On State Voltage:

2.5 V

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

TR

Minimum Peak Off-state Voltage:

600 V

Peak Surge Current:

1 A

Repetitive Off-state Voltage (Peak):

600 V

Maximum Reverse Leakage Current:

.0001 A

Trade Compliance

MOC3053SR2VM Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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