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MOC223R2VM

Onsemi

MOC223R2VM by Onsemi

MOC223R2VM by Onsemi is a single configuration optocoupler with a max forward current of 0.06A. It has a min operating temperature of -40°C and a max operating temperature of 100°C. This optocoupler is commonly used in applications requiring high isolation voltage and surface mounting feature.

Median Price

$0.639

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 300 parts In-Stock

1+ parts

$0.639

100+ parts

$0.607

1k+ parts

$0.607

10k+ parts

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300

$0.639

$0.607

$0.607

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Distributors (In-Stock)

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Digiode

USA . 2,744 parts In-Stock

1+ parts

$0.607

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2,744

$0.607

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Vyrian

USA . 2,042 parts In-Stock

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2,042

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Nova Conductors

Japan . 96 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 164 parts In-Stock

1+ parts

$0.540

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164

$0.540

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Semicontronic

India . 25 parts In-Stock

1+ parts

$0.540

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$0.526

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$0.524

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25

$0.540

$0.526

$0.524

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Corphita

USA . 1,421 parts In-Stock

1+ parts

$0.575

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1,421

$0.575

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Advanced Electronics

New Zealand . 300 parts In-Stock

1+ parts

$0.639

100+ parts

$0.607

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$0.607

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300

$0.639

$0.607

$0.607

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Corohmni

South Africa . 466 parts In-Stock

1+ parts

$0.639

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466

$0.639

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Aztec Data Supply Inc.

USA . 260 parts In-Stock

1+ parts

$0.703

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260

$0.703

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Andel Nordic

Denmark . 5,823 parts In-Stock

1+ parts

$4.196

100+ parts

-

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$4.028

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$4.028

5,823

$4.196

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$4.028

$4.028

AZTECH Wire

Italy . 235 parts In-Stock

1+ parts

$10.258

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235

$10.258

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TANS Electronics

Latvia . 7,907 parts In-Stock

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7,907

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Problanco Electronics

Mexico . 3,870 parts In-Stock

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Argo Parts USA

USA . 3,212 parts In-Stock

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Continental Prestige Electronics

USA . 2,871 parts In-Stock

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Glotronic Ltd.

UK . 1,800 parts In-Stock

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1,800

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SupplyDigital Components

Austria . 1,070 parts In-Stock

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1,070

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Robosynatics

Brazil . 300 parts In-Stock

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300

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Lucentia Tech

USA . 300 parts In-Stock

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Supply Digital

USA . 209 parts In-Stock

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Kulean Microsystems

USA . 96 parts In-Stock

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UHIMA Technologies

Türkiye . 11 parts In-Stock

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Overview

Experience the next level of performance with the MOC223R2VM by Onsemi. As a leading manufacturer, Onsemi guarantees top-notch quality and reliability, ensuring that this optocoupler transistor output exceeds your expectations. With its darlington output configuration and high current transfer ratio, this product is perfect for a wide range of applications. From industrial automation to consumer electronics, the MOC223R2VM offers exceptional value by delivering superior isolation voltage and low power dissipation. Unlock new possibilities and enhance your designs with the advantages and benefits of the MOC223R2VM from Onsemi.

Feature Benefit Bullets

Configuration: SINGLE

This product's single configuration allows for easy and straightforward integration into various systems, making it a versatile and convenient choice.

Maximum Forward Current: 0.06 A

With a high maximum forward current, this optocoupler transistor output can handle demanding applications and provide reliable performance.

Optoelectronic Type: DARLINGTON OUTPUT OPTOCOUPLER

The Darlington output optocoupler type enhances this product's ability to amplify weak signals, enabling precise and accurate signal transmission.

Maximum Operating Temperature: 100 °C

The high maximum operating temperature of this optocoupler transistor output ensures its durability and reliability even in harsh and demanding environments.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows this product to operate effectively in cold environments, making it suitable for a wide range of applications.

Maximum Power Dissipation: 0.15 W

This optocoupler transistor output features a low power dissipation, which enhances energy efficiency and reduces the risk of overheating.

Minimum Current Transfer Ratio: 500%

With a high minimum current transfer ratio, this product ensures accurate signal transmission and efficient amplification, making it a reliable choice for precise applications.

Maximum Dark Current: 50 nA

The low maximum dark current of this optocoupler transistor output minimizes signal distortion and ensures reliable performance even in low-light conditions.

Packing Method: TR

The TR packing method offers convenience and ease of handling during product installation and transportation, making it a practical choice for various applications.

Minimum Collector-emitter Breakdown Voltage: 30 V

The high minimum collector-emitter breakdown voltage makes this product suitable for demanding voltage applications, ensuring its durability and reliability.

Nominal Current Transfer Ratio: 1000%

With a high nominal current transfer ratio, this optocoupler transistor output ensures accurate signal transmission and efficient amplification, making it ideal for precise and sensitive applications.

Maximum Isolation Voltage: 2500 V

The high maximum isolation voltage of this product ensures reliable signal isolation and protects sensitive components from potential damage, making it a safe and secure choice.

Mounting Feature: SURFACE MOUNT

The surface mounting feature simplifies the installation process and allows for compact integration, making this product suitable for space-constrained applications.

Maximum Forward Voltage: 1.3 V

With a low maximum forward voltage, this optocoupler transistor output minimizes power consumption and enhances energy efficiency, making it an eco-friendly choice.

Maximum On State Current: 0.15 A

The high maximum on-state current of this product allows for efficient and reliable signal switching, making it suitable for applications requiring high-speed and accurate control.

Technical Specifications

Optocoupler Transistor Outputs MOC223R2VM attributes and parameters. Explore more Optocoupler Transistor Outputs devices from Onsemi

Specs

Additional Features:

IEC-60747-5-5, UL APPROVED

Minimum Collector-emitter Breakdown Voltage:

30 V

Configuration:

SINGLE

Minimum Current Transfer Ratio:

500 %

Nominal Current Transfer Ratio:

1000 %

Maximum Dark Current:

50 nA

Maximum Forward Current:

.06 A

Maximum Forward Voltage:

1.3 V

Maximum Isolation Voltage:

2500 V

Mounting Feature:

No. of Elements:

1

Maximum On State Current:

.15 A

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

TR

Maximum Power Dissipation:

.15 W

Trade Compliance

MOC223R2VM Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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