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MMBZ5240BLT3G

Onsemi

MMBZ5240BLT3G by Onsemi

MMBZ5240BLT3G by Onsemi is a Zener diode with 10V nominal reference voltage, 5% max voltage tolerance, and 17 ohm max dynamic impedance. It is ideal for applications requiring precise voltage regulation in compact electronic devices due to its small outline package style and unidirectional polarity.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 4,820 parts In-Stock

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Digiode

USA . 812 parts In-Stock

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AZTECH Wire

Italy . 511 parts In-Stock

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$13.530

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QUARKTWIN TECHNOLOGY LTD

USA . 8,707 parts In-Stock

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SupplyDigital Components

Austria . 7,971 parts In-Stock

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Problanco Electronics

Mexico . 7,137 parts In-Stock

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Kulean Microsystems

USA . 4,793 parts In-Stock

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TANS Electronics

Latvia . 3,680 parts In-Stock

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UHIMA Technologies

Türkiye . 394 parts In-Stock

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Corohmni

South Africa . 191 parts In-Stock

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Corphita

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Overview

Enhance your electronic designs with the MMBZ5240BLT3G Zener Diode by Onsemi. Known for their high quality and reliability, Onsemi products are trusted by professionals worldwide. This diode is perfect for voltage regulation in various applications, providing stable performance and protection against voltage spikes. With its small outline package and unidirectional polarity, this Zener diode offers easy installation and efficient operation. Trust Onsemi for all your electronic component needs and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the diode, ensuring a longer lifespan.

Working Test Current: 20 mA

Suitable for a wide range of electronic applications without risking damage to the diode.

Surface Mount: YES

Enables easy integration onto circuit boards, saving space and simplifying assembly.

Maximum Voltage Tolerance: 5 %

Ensures accuracy in voltage regulation, making it reliable for various circuits.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for demanding environments.

Maximum Power Dissipation: 0.225 W

Capable of handling power dissipation efficiently, preventing overheating.

Diode Type: ZENER DIODE

Specifically designed for voltage regulation, making it ideal for precision applications.

Nominal Reference Voltage: 10 V

Provides a stable reference voltage, ensuring consistent performance in circuits.

Technology: ZENER

Utilizes Zener technology for precise voltage regulation, suitable for critical applications.

Technical Specifications

Zener Diodes MMBZ5240BLT3G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

17 ohm

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Nominal Reference Voltage:

10 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

20 mA

Trade Compliance

MMBZ5240BLT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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