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MMBZ5236ELT1G

Onsemi

MMBZ5236ELT1G by Onsemi

MMBZ5236ELT1G by Onsemi is a Zener diode with a nominal reference voltage of 7.5V and max power dissipation of 0.225W. It operates in temperatures ranging from -65 to 150 °C and has a max dynamic impedance of 6 ohm. This diode is ideal for applications requiring precise voltage regulation in compact electronic devices due to its small outline package style and unidirectional polarity.

Median Price

$0.045

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

$0.040

1k+ parts

$0.033

10k+ parts

$0.029

9,000

-

$0.040

$0.033

$0.029

Verical

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.050

9,000

-

-

-

$0.050

Distributors (In-Stock)

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Digiode

USA . 1,314 parts In-Stock

1+ parts

$0.031

100+ parts

-

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1,314

$0.031

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Vyrian

USA . 3,333 parts In-Stock

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3,333

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Distributors (Availability)

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Corphita

USA . 2,015 parts In-Stock

1+ parts

$0.030

100+ parts

-

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2,015

$0.030

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Corohmni

South Africa . 137 parts In-Stock

1+ parts

$0.033

100+ parts

-

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137

$0.033

-

-

-

Advanced Electronics

New Zealand . 600 parts In-Stock

1+ parts

$0.204

100+ parts

$0.186

1k+ parts

$0.167

10k+ parts

-

600

$0.204

$0.186

$0.167

-

AZTECH Wire

Italy . 1,077 parts In-Stock

1+ parts

$12.580

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1,077

$12.580

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Kulean Microsystems

USA . 7,658 parts In-Stock

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7,658

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TANS Electronics

Latvia . 6,292 parts In-Stock

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6,292

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Problanco Electronics

Mexico . 5,159 parts In-Stock

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5,159

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SupplyDigital Components

Austria . 4,069 parts In-Stock

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4,069

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UHIMA Technologies

Türkiye . 137 parts In-Stock

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137

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Overview

Discover the exceptional quality and reliability of the MMBZ5236ELT1G Zener Diode by Onsemi. Designed to meet the highest industry standards, this product offers unparalleled performance and precision in a compact package. With applications ranging from voltage regulation to signal conditioning, this Zener diode provides customers with unmatched value and efficiency. Trust Onsemi's expertise and innovation for all your electronic component needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection to the diode, making it a reliable choice for various applications.

Working Test Current: 20 mA

With a working test current of 20 mA, this zener diode can handle moderate current levels, making it suitable for a wide range of circuit designs.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation on circuit boards, saving time and effort.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C ensures reliable performance even in demanding environments.

Maximum Power Dissipation: 0.225 W

With a maximum power dissipation of 0.225 W, this zener diode can handle power efficiently without overheating.

Nominal Reference Voltage: 7.5 V

The 7.5 V nominal reference voltage makes this zener diode suitable for voltage regulation and protection in various electronic circuits.

Technical Specifications

Zener Diodes MMBZ5236ELT1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

6 ohm

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Nominal Reference Voltage:

7.5 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5.07 %

Working Test Current:

20 mA

Trade Compliance

MMBZ5236ELT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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