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MMBZ5236ELT1

Onsemi

MMBZ5236ELT1 by Onsemi

MMBZ5236ELT1 by Onsemi is a Zener diode with a nominal reference voltage of 7.5V and max power dissipation of 0.225W. It operates at a max temperature of 150 °C, has a working test current of 20mA, and features unidirectional polarity. This diode is ideal for applications requiring precise voltage regulation in compact electronic devices due to its small outline package style and surface mount configuration.

Median Price

$0.051

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 19,930 parts In-Stock

1+ parts

-

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$0.053

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$0.044

10k+ parts

$0.039

19,930

-

$0.053

$0.044

$0.039

Verical

USA . 19,930 parts In-Stock

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$0.049

19,930

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$0.049

Distributors (In-Stock)

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Digiode

USA . 465 parts In-Stock

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$0.041

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$0.041

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Vyrian

USA . 1,960 parts In-Stock

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1,960

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Distributors (Availability)

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Corphita

USA . 420 parts In-Stock

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$0.039

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420

$0.039

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Corohmni

South Africa . 447 parts In-Stock

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$0.043

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447

$0.043

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AZTECH Wire

Italy . 877 parts In-Stock

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$12.360

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877

$12.360

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Continental Prestige Electronics

USA . 19,930 parts In-Stock

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$0.042

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19,930

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$0.042

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Problanco Electronics

Mexico . 8,212 parts In-Stock

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TANS Electronics

Latvia . 6,328 parts In-Stock

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SupplyDigital Components

Austria . 2,466 parts In-Stock

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UHIMA Technologies

Türkiye . 628 parts In-Stock

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Kulean Microsystems

USA . 583 parts In-Stock

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583

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Overview

Experience unparalleled quality and reliability with the MMBZ5236ELT1 by Onsemi, a leading manufacturer in the industry. As a Zener Diode, this product offers precise voltage regulation and protection in a compact package, making it ideal for a wide range of applications. Whether you're designing consumer electronics or industrial equipment, this high-performance diode ensures stable operation and long-term durability. Trust Onsemi to deliver innovative solutions that exceed your expectations and elevate your designs to the next level. Upgrade to the MMBZ5236ELT1 today and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a longer lifespan.

Working Test Current: 20 mA

Suitable for a variety of low-power applications, making it versatile.

Surface Mount: YES

Allows for easy and convenient mounting on circuit boards.

Maximum Voltage Tolerance: 5.07 %

Ensures precise voltage regulation, enhancing the reliability of the circuit.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a wide range of operating environments.

Maximum Dynamic Impedance: 6 ohm

Offers good performance in terms of impedance matching and signal integrity.

Terminal Finish: TIN LEAD

Provides a reliable electrical connection and prevents oxidation of terminals.

Nominal Reference Voltage: 7.5 V

Provides a stable reference voltage for voltage regulation in circuits.

Polarity: UNIDIRECTIONAL

Ensures that current flows in one direction only, preventing reverse current flow and protecting the circuit.

Technical Specifications

Zener Diodes MMBZ5236ELT1 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

6 ohm

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Nominal Reference Voltage:

7.5 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5.07 %

Working Test Current:

20 mA

Trade Compliance

MMBZ5236ELT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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