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MMBZ5235ELT1G

Onsemi

MMBZ5235ELT1G by Onsemi

MMBZ5235ELT1G by Onsemi is a Zener diode with 6.8V nominal reference voltage, 20mA test current, and 5% voltage tolerance. It is ideal for applications requiring precise voltage regulation in small outline packages. With a max operating temperature of 150 °C and low dynamic impedance of 5 ohm, it ensures reliable performance in various electronic circuits.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 72,000 parts In-Stock

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$0.030

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$0.025

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$0.023

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$0.023

Verical

USA . 54,000 parts In-Stock

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Digiode

USA . 1,534 parts In-Stock

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$0.024

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Vyrian

USA . 6,949 parts In-Stock

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Prism Electronics

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Corphita

USA . 2,403 parts In-Stock

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$0.022

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Corohmni

South Africa . 76 parts In-Stock

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AZTECH Wire

Italy . 716 parts In-Stock

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$17.070

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Continental Prestige Electronics

USA . 72,000 parts In-Stock

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$0.021

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SupplyDigital Components

Austria . 7,533 parts In-Stock

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Problanco Electronics

Mexico . 4,630 parts In-Stock

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TANS Electronics

Latvia . 4,219 parts In-Stock

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Kulean Microsystems

USA . 3,405 parts In-Stock

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UHIMA Technologies

Türkiye . 953 parts In-Stock

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Perfect Parts

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Overview

Unlock the power of precision with the MMBZ5235ELT1G Zener Diode by Onsemi. Designed for reliability and performance, this small outline diode offers a maximum voltage tolerance of 5% and a nominal reference voltage of 6.8V. Perfect for a wide range of applications, from voltage regulation to signal conditioning, this diode ensures stable and accurate operation in any circuit. Trust Onsemi's commitment to quality and innovation, and experience the benefits of seamless integration and superior performance with the MMBZ5235ELT1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good mechanical strength and insulation, making the diode durable and reliable in various applications.

Working Test Current: 20 mA

Ensures stable and consistent performance within the specified current range.

Surface Mount: YES

Allows for easy and convenient installation on printed circuit boards, saving space and making assembly more efficient.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, ensuring reliability in harsh environmental conditions.

Maximum Power Dissipation: 0.225 W

Ability to dissipate heat efficiently, preventing overheating and ensuring long-term operation.

Nominal Reference Voltage: 6.8 V

Provides a stable voltage reference, ideal for voltage regulation and protection in electronic circuits.

Technical Specifications

Zener Diodes MMBZ5235ELT1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

5 ohm

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Nominal Reference Voltage:

6.8 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

20 mA

Trade Compliance

MMBZ5235ELT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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