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MMBZ5235ELT1

Onsemi

MMBZ5235ELT1 by Onsemi

MMBZ5235ELT1 by Onsemi is a Zener diode with 6.8V nominal reference voltage, 5% max voltage tolerance, and 20mA working test current. It is used in applications requiring unidirectional polarity, such as voltage regulation in electronic circuits. The diode has a small outline package style, operates up to 150 °C, and features a max power dissipation of 0.225W.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 23,889 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

23,889

-

$0.030

$0.025

$0.023

Verical

USA . 23,889 parts In-Stock

1+ parts

-

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23,889

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Distributors (In-Stock)

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Digiode

USA . 1,772 parts In-Stock

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$0.024

100+ parts

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1,772

$0.024

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Vyrian

USA . 5,792 parts In-Stock

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5,792

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Distributors (Availability)

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Corphita

USA . 1,593 parts In-Stock

1+ parts

$0.022

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1,593

$0.022

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Corohmni

South Africa . 67 parts In-Stock

1+ parts

$0.025

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67

$0.025

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AZTECH Wire

Italy . 938 parts In-Stock

1+ parts

$18.170

100+ parts

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938

$18.170

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Continental Prestige Electronics

USA . 23,889 parts In-Stock

1+ parts

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$0.021

23,889

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$0.021

Kulean Microsystems

USA . 2,253 parts In-Stock

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2,253

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SupplyDigital Components

Austria . 2,078 parts In-Stock

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2,078

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Problanco Electronics

Mexico . 1,991 parts In-Stock

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1,991

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TANS Electronics

Latvia . 1,725 parts In-Stock

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1,725

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UHIMA Technologies

Türkiye . 754 parts In-Stock

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754

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Overview

Experience the superior quality and reliability of the MMBZ5235ELT1 Zener Diode by Onsemi. With a reputation for excellence in semiconductor manufacturing, Onsemi delivers cutting-edge technology and precision engineering in every product. This Zener diode is ideal for a wide range of applications, offering customers unmatched value and performance. Whether you're looking to regulate voltage, protect circuits, or achieve stable reference voltages, the MMBZ5235ELT1 is the perfect choice. Trust Onsemi to deliver innovative solutions that exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides good protection for the zener diode, ensuring its durability and reliability.

Working Test Current: 20 mA

The zener diode can handle a working test current of 20 mA, making it suitable for various electronic applications.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation on circuit boards.

Maximum Voltage Tolerance: 5%

The low maximum voltage tolerance of 5% ensures precise voltage regulation in the circuit.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this zener diode can perform reliably in various environmental conditions.

Maximum Power Dissipation: 0.225 W

The zener diode has a maximum power dissipation of 0.225 W, allowing it to handle power efficiently without overheating.

Nominal Reference Voltage: 6.8 V

The nominal reference voltage of 6.8 V makes this zener diode suitable for voltage regulation and protection in electronic circuits.

Technical Specifications

Zener Diodes MMBZ5235ELT1 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

5 ohm

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Nominal Reference Voltage:

6.8 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

20 mA

Trade Compliance

MMBZ5235ELT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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