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MMBZ5232ELT1G

Onsemi

MMBZ5232ELT1G by Onsemi

MMBZ5232ELT1G by Onsemi is a Zener diode with a 5.6V nominal reference voltage and 11 ohm max dynamic impedance. It operates b/w -65 to 150 °C, with a max power dissipation of 0.225W. Ideal for applications requiring precise voltage regulation in compact electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 7,936 parts In-Stock

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PAR Electronics

UK . 3,000 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 725 parts In-Stock

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Component Stockers USA

USA . 593 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 17,469 parts In-Stock

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Kepictronics

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Perfect Parts

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Eliminating Global Boundries, Inc

USA . 6,000 parts In-Stock

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TANS Electronics

Latvia . 4,689 parts In-Stock

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Problanco Electronics

Mexico . 4,500 parts In-Stock

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Corphita

USA . 1,443 parts In-Stock

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SupplyDigital Components

Austria . 1,412 parts In-Stock

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Kulean Microsystems

USA . 463 parts In-Stock

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Corohmni

South Africa . 157 parts In-Stock

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UHIMA Technologies

Türkiye . 2 parts In-Stock

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Overview

Unlock new possibilities with the MMBZ5232ELT1G Zener Diode by Onsemi. Known for their superior quality and reliability, Onsemi provides cutting-edge solutions for a wide range of applications. With its small outline package and unidirectional polarity, this Zener diode offers exceptional value and benefits to customers looking for precise voltage regulation. Whether you're working on power supplies, automotive electronics, or industrial control systems, trust Onsemi to deliver top-notch performance every time. Experience the difference with the MMBZ5232ELT1G Zener Diode today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection, making the product suitable for various environments.

Working Test Current: 20 mA

Optimal current for testing ensures accurate performance evaluation.

Surface Mount: YES

Allows for easy installation on circuit boards, saving time and effort.

Maximum Voltage Tolerance: 5 %

Ensures stability in voltage regulation, reducing the chances of circuit damage.

Maximum Operating Temperature: 150 °C

High operating temperature range allows for use in various applications without overheating.

Maximum Power Dissipation: 0.225 W

Efficient power dissipation capability ensures reliability and longevity of the product.

Nominal Reference Voltage: 5.6 V

Provides precise voltage regulation, ensuring consistent performance in the circuit.

Polarity: UNIDIRECTIONAL

Unidirectional polarity allows for easy integration into circuits and prevents reverse current flow.

Technical Specifications

Zener Diodes MMBZ5232ELT1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

11 ohm

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Nominal Reference Voltage:

5.6 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

20 mA

Trade Compliance

MMBZ5232ELT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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