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MMBZ5230BLT3G

Onsemi

MMBZ5230BLT3G by Onsemi

MMBZ5230BLT3G by Onsemi is a Zener diode with a nominal reference voltage of 4.7V and max power dissipation of 0.225W. It operates at a max temperature of 150 °C, has a working test current of 20mA, and offers a max voltage tolerance of 5.11%. This diode is ideal for applications requiring precise voltage regulation in compact electronic devices due to its small outline package style and gull wing terminal form.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

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Digiode

USA . 1,627 parts In-Stock

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AZTECH Wire

Italy . 1,089 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 22,323 parts In-Stock

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TANS Electronics

Latvia . 7,656 parts In-Stock

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SupplyDigital Components

Austria . 7,161 parts In-Stock

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Kulean Microsystems

USA . 4,275 parts In-Stock

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Problanco Electronics

Mexico . 2,365 parts In-Stock

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Corphita

USA . 2,182 parts In-Stock

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UHIMA Technologies

Türkiye . 979 parts In-Stock

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Corohmni

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Overview

Discover the power of reliable and efficient Zener Diodes with the MMBZ5230BLT3G by Onsemi. Crafted with precision and quality in mind, this product offers unparalleled performance and durability for a wide range of applications. Whether you're in need of voltage regulation or transient protection, Onsemi's Zener Diodes are designed to exceed your expectations. Trust in the expertise of Onsemi and see the difference that the MMBZ5230BLT3G can make in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection for the zener diode, ensuring durability and longevity.

Working Test Current: 20 mA

The zener diode can handle a relatively high current, making it suitable for various applications.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation on PCBs, saving space and time.

Maximum Operating Temperature: 150 °C

The zener diode can operate at high temperatures without risk of damage, making it reliable in demanding environments.

Nominal Reference Voltage: 4.7 V

This specific reference voltage makes the zener diode ideal for applications requiring precise voltage regulation.

Technical Specifications

Zener Diodes MMBZ5230BLT3G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

19 ohm

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Nominal Reference Voltage:

4.7 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5.11 %

Working Test Current:

20 mA

Trade Compliance

MMBZ5230BLT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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