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MMBT5210

Onsemi

MMBT5210 by Onsemi

MMBT5210 by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.35W, hFE of 250, and operates up to 150 °C. With a max collector-emitter voltage of 50V and max collector current of 0.1A, it offers reliable performance in small outline packages.

Median Price

$0.909

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 50 parts In-Stock

1+ parts

$0.909

100+ parts

$0.827

1k+ parts

$0.745

10k+ parts

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50

$0.909

$0.827

$0.745

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Distributors (In-Stock)

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Digiode

USA . 1,540 parts In-Stock

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$0.864

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1,540

$0.864

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ACDS - Activité Composants Distribution Service

France . 27,000 parts In-Stock

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Vyrian

USA . 8,666 parts In-Stock

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Chip Stock

USA . 3,300 parts In-Stock

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Prism Electronics

USA . 2,994 parts In-Stock

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Bristol Electronics

USA . 2,628 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 2,154 parts In-Stock

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Anansix

USA . 1,779 parts In-Stock

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R&J Components

USA . 385 parts In-Stock

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385

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Distributors (Availability)

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Corphita

USA . 1,087 parts In-Stock

1+ parts

$0.818

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$0.818

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Corohmni

South Africa . 162 parts In-Stock

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$0.909

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162

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Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$0.909

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$0.827

1k+ parts

$0.745

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50

$0.909

$0.827

$0.745

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Ampacity Inc.

Singapore . 2 parts In-Stock

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$1.680

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Component Stockers USA

USA . 294 parts In-Stock

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$99.990

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Kepictronics

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Perfect Parts

USA . 20,561 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 15,742 parts In-Stock

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SupplyDigital Components

Austria . 8,053 parts In-Stock

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Problanco Electronics

Mexico . 6,314 parts In-Stock

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TANS Electronics

Latvia . 6,267 parts In-Stock

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Kulean Microsystems

USA . 5,561 parts In-Stock

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Supply Digital

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UHIMA Technologies

Türkiye . 322 parts In-Stock

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322

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Overview

Upgrade your electronic projects with the MMBT5210 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Small Signal Bipolar Junction Transistors that provide exceptional performance and reliability. Whether you're working on amplifier circuits or other applications, this NPN transistor offers a compact design with superior power dissipation capabilities. With a minimum DC current gain of 250 and a maximum operating temperature of 150 °C, the MMBT5210 ensures efficiency and durability for all your projects. Trust Onsemi to deliver the best in transistor technology for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various electronic applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product ideal for amplifier applications.

Configuration: SINGLE

Single configuration simplifies the design and integration process, making this transistor easy to use.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in such circuits.

Surface Mount: YES

Surface mount capability allows for easier and more efficient PCB assembly.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and are suitable for surface mounting, enhancing overall reliability.

No. of Terminals: 3

Having 3 terminals allows for simple integration into various circuits while maintaining necessary connections.

Maximum Power Dissipation (Abs): 0.35 W

With a high power dissipation, this transistor can handle a considerable amount of power without overheating.

Minimum DC Current Gain (hFE): 250

High DC current gain ensures efficient amplification and signal processing in amplifier circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliable performance even in demanding environments.

Maximum Collector-Emitter Voltage: 50 V

With a high collector-emitter voltage rating, this transistor offers versatility in various voltage applications.

Transistor Element Material: SILICON

Silicon transistor elements are widely used for their reliability and performance, making this product a dependable choice.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current rating of 0.1 A, this transistor can handle moderate current levels in circuits.

Terminal Finish: Tin (Sn)

Tin terminal finish provides good conductivity and solderability, ensuring secure connections during assembly.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit design and integration, making this transistor versatile.

Maximum Time At Peak Reflow Temperature (s): 30

Short time required at peak reflow temperature during assembly ensures efficient manufacturing processes.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this transistor can withstand the heat of solder reflow processes during assembly.

Nominal Transition Frequency (fT): 30 MHz

High nominal transition frequency allows for fast switching speeds and reliable performance in high-frequency circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMBT5210 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

250

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMBT5210 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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