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MM3Z3V6ST1G

Onsemi

MM3Z3V6ST1G by Onsemi

MM3Z3V6ST1G by Onsemi is a Zener diode with a nominal reference voltage of 3.6V and max voltage tolerance of 3.36%. It operates at a max temperature of 150 °C, has a working test current of 5mA, and features gull wing terminal form. This diode is ideal for applications requiring precise voltage regulation in compact electronic devices.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 10,366 parts In-Stock

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-

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$0.030

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$0.025

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$0.023

10,366

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$0.030

$0.025

$0.023

Distributors (In-Stock)

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Digiode

USA . 778 parts In-Stock

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$0.024

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778

$0.024

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Vyrian

USA . 9,006 parts In-Stock

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Velocity Electronics

USA . 3,972 parts In-Stock

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Corphita

USA . 865 parts In-Stock

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$0.022

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865

$0.022

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Corohmni

South Africa . 482 parts In-Stock

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482

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Andel Nordic

Denmark . 2,196 parts In-Stock

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$2.308

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$2.216

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$2.216

2,196

$2.308

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$2.216

$2.216

AZTECH Wire

Italy . 738 parts In-Stock

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$8.590

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738

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Kepictronics

USA . 74,100 parts In-Stock

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Problanco Electronics

Mexico . 7,778 parts In-Stock

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Kulean Microsystems

USA . 7,304 parts In-Stock

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SupplyDigital Components

Austria . 6,192 parts In-Stock

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TANS Electronics

Latvia . 1,791 parts In-Stock

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Perfect Parts

USA . 672 parts In-Stock

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UHIMA Technologies

Türkiye . 363 parts In-Stock

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Overview

Unlock a world of precision and reliability with the MM3Z3V6ST1G Zener Diode by Onsemi. As a trusted manufacturer in the industry, Onsemi brings you a top-quality product designed for a wide range of applications. The MM3Z3V6ST1G offers exceptional value with its stable performance, high voltage tolerance, and low dynamic impedance. Whether you're working on consumer electronics, automotive systems, or industrial equipment, this Zener diode delivers unmatched benefits and advantages to ensure seamless operation and optimal functionality. Choose Onsemi for excellence you can trust.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good protection and durability for the zener diode, ensuring longevity and reliability.

Working Test Current: 5 mA

The working test current of 5 mA allows for reliable performance under typical operating conditions.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards, saving space and simplifying assembly.

Maximum Voltage Tolerance: 3.36 %

The low voltage tolerance of 3.36% ensures precise voltage regulation, making this zener diode suitable for applications requiring stable voltage levels.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this zener diode can withstand high temperature environments and operate reliably under elevated temperatures.

Maximum Power Dissipation: 0.2 W

The maximum power dissipation of 0.2W indicates the capability of this zener diode to handle moderate power levels without overheating.

Diode Type: ZENER DIODE

Being a zener diode, this product is specifically designed for voltage regulation applications, making it a suitable choice for circuits requiring stable voltage references.

Nominal Reference Voltage: 3.6 V

The nominal reference voltage of 3.6V ensures consistent and accurate voltage regulation, making this zener diode ideal for precision electronic devices.

Technical Specifications

Zener Diodes MM3Z3V6ST1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

90 ohm

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Nominal Reference Voltage:

3.6 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

3.36 %

Working Test Current:

5 mA

Trade Compliance

MM3Z3V6ST1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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