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MM3Z27VT3G

Onsemi

MM3Z27VT3G by Onsemi

MM3Z27VT3G by Onsemi is a Zener diode with a 27V nominal reference voltage and 18.9V reverse test voltage. It has a max power dissipation of 0.2W, making it suitable for applications requiring precise voltage regulation in temperature-sensitive environments. With a small outline package style and dual terminal position, it is ideal for surface mount designs where space is limited.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

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AZTECH Wire

Italy . 1,033 parts In-Stock

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Component Stockers USA

USA . 321 parts In-Stock

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$99.990

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Kepictronics

USA . 46,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 19,882 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

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TANS Electronics

Latvia . 2,601 parts In-Stock

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SupplyDigital Components

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Corphita

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South Africa . 474 parts In-Stock

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UHIMA Technologies

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Overview

Discover the reliable performance and high-quality design of the Onsemi MM3Z27VT3G Zener Diode. Manufactured by Onsemi, a trusted name in the industry, this diode offers unmatched precision and efficiency in a wide range of applications. From voltage regulation to signal conditioning, this diode provides exceptional value and benefits to customers looking for a dependable solution. Upgrade your electronics with the MM3Z27VT3G and experience the advantages of superior technology and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good mechanical protection and insulation for the diode, ensuring reliable performance and durability.

Working Test Current: 2 mA

Suitable for a wide range of applications that require low current operation.

Maximum Reverse Current: 0.05 uA

Ensures minimal leakage current in the reverse direction, maintaining the stability of the circuit.

Maximum Operating Temperature: 150 °C

Allows for use in high-temperature environments without compromising performance.

Nominal Reference Voltage: 27 V

Provides a stable reference voltage for precise voltage regulation in circuits.

Technical Specifications

Zener Diodes MM3Z27VT3G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

80 ohm

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Maximum Knee Impedance:

300 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.2 W

Nominal Reference Voltage:

27 V

Maximum Reverse Current:

.05 uA

Reverse Test Voltage:

18.9 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

7.04 %

Working Test Current:

2 mA

Trade Compliance

MM3Z27VT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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