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MC54HC595AJ

Onsemi

MC54HC595AJ by Onsemi

MC54HC595AJ by Onsemi is an 8-bit digital shift register with a propagation delay of 140 ns. It operates at a supply voltage range of 2-6V and has a max frequency of 35 MHz. Ideal for military-grade applications requiring true output polarity and positive edge trigger type.

Median Price

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Lifecycle Status

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Vyrian

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Manoshevitz Elec. Sales

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Corel Iberica Componentes, S.L.

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ABC Electronics Ltd.

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Q Components

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ComSIT Distribution GmbH

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PAR Electronics

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ACDS - Activité Composants Distribution Service

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SupplyDigital Components

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Kulean Microsystems

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Overview

Looking to enhance your digital shift register applications? Look no further than the MC54HC595AJ by Onsemi. With a reputation for top-quality products, Onsemi delivers reliability and performance in every component they produce. The MC54HC595AJ offers customers value and convenience with its 8-bit design, fast propagation delay, and true output polarity. Whether you're working on military-grade projects or industrial automation systems, this product is sure to exceed your expectations. Upgrade your shift register experience today with Onsemi's MC54HC595AJ.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Provides durability and protection for the internal components, ensuring reliable performance in various environments.

No. of Bits: 8

Offers sufficient capacity for data storage and manipulation, suitable for many digital applications.

Nominal Supply Voltage / Vsup (V): 5

Compatible with common power sources, making integration easier in existing systems.

Propagation Delay (tpd): 140 ns

Delivers fast response times, crucial for real-time data processing and communication.

Trigger Type: POSITIVE EDGE

Allows for precise synchronization and control of data input, enhancing system accuracy.

Temperature Grade: MILITARY

Designed to withstand extreme temperature conditions, making it suitable for rugged applications.

Minimum fmax: 35 MHz

Supports high-frequency operation, enabling quick data processing and transmission.

Technical Specifications

Digital Shift Registers MC54HC595AJ attributes and parameters. Explore more Digital Shift Registers devices from Onsemi

Specs

Count Direction:

RIGHT

Family:

HC/UH

JESD-30 Code:

R-GDIP-T16

Length:

19.49 mm

Logic IC Type:

No. of Bits:

8

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Propagation Delay (tpd):

140 ns

Maximum Seated Height:

5.08 mm

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trigger Type:

POSITIVE EDGE

Width:

7.62 mm

Minimum fmax:

35 MHz

Trade Compliance

MC54HC595AJ Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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