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MC34152D

Onsemi

MC34152D by Onsemi

MC34152D by Onsemi is a MOSFET Gate Driver with 2 functions, operating at 6.5-18V. It has a turn-on/off time of 0.12us and supports a peak current limit of 1.5A. Ideal for commercial applications requiring high side drivers in compact spaces due to its small outline package style.

Median Price

$3.919

Lifecycle Status

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16

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1k+

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Adafruit Industries

USA . 100 parts In-Stock

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$7.481

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$7.406

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Rochester

USA . 25 parts In-Stock

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$0.357

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$0.296

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$0.264

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Nova Conductors

Japan . 1,000 parts In-Stock

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$0.261

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$0.261

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Digiode

USA . 1,244 parts In-Stock

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American Microsemiconductor Inc.

USA . 98 parts In-Stock

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$2.420

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Chip Stock

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Vyrian

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ComSIT USA

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Bristol Electronics

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Cyclops Electronics Ltd

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LIBRA Elektronik GmbH

Germany . 187 parts In-Stock

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Semi Source

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Atlantic Semiconductor

USA . 55 parts In-Stock

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Legend Electronics Inc.

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 42 parts In-Stock

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A2Z Electronics, Inc.

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Ampacity Inc.

Singapore . 63 parts In-Stock

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$0.248

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Netroflash

USA . 1,000 parts In-Stock

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$0.261

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Corphita

USA . 2,011 parts In-Stock

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$0.263

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Corohmni

South Africa . 368 parts In-Stock

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$0.292

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Component Stockers USA

USA . 30 parts In-Stock

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$0.300

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AZTECH Wire

Italy . 857 parts In-Stock

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$5.261

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$7.481

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$7.406

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$7.107

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SupplyDigital Components

Austria . 6,406 parts In-Stock

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Kulean Microsystems

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UHIMA Technologies

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TANS Electronics

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Microchip USA

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Problanco Electronics

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Overview

Unleash the power of precision with the MC34152D MOSFET Gate Driver by Onsemi. Designed to deliver optimal performance and reliability, this small outline package offers a seamless integration into various applications. With a nominal supply voltage of 12V and a peak output current limit of 1.5A, this high-side driver ensures efficient operation and enhanced functionality. Trust in Onsemi's renowned quality and expertise to elevate your projects to the next level. Choose the MC34152D for unparalleled value and unmatched benefits that cater to all your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body provides durability and protection for the internal components of the MOSFET gate driver.

Surface Mount: YES

Being surface mountable makes installation and integration of this MOSFET gate driver easy and convenient.

Maximum Supply Voltage: 18 V

With a high maximum supply voltage of 18V, this gate driver is suitable for a wide range of applications.

No. of Functions: 2

Having 2 functions allows for versatility in controlling and driving MOSFETs in various configurations.

Package Shape: RECTANGULAR

The rectangular package shape ensures compatibility and easy mounting on PCBs or other electronic components.

Power Supplies (V): 12

Operating at a nominal supply voltage of 12V, this gate driver is efficient and suitable for many power applications.

No. of Terminals: 8

The 8 terminals provide ample connection points for interfacing with external circuits and components.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature of 70°C ensures reliability and performance in various environmental conditions.

Minimum Operating Temperature: 0 °C

Operating at a minimum temperature of 0°C allows for use in a wide range of temperature environments.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good solderability and conductivity for reliable connections.

High Side Driver: YES

The inclusion of a high side driver allows for driving MOSFETs on the high side of the circuit, increasing flexibility and functionality.

Nominal Output Peak Current Limit: 1.5 A

With a nominal output peak current limit of 1.5A, this gate driver can handle moderate to high current requirements in power applications.

Technical Specifications

MOSFET Gate Drivers MC34152D attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Terminals:

8

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Nominal Output Peak Current Limit:

1.5 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Power Supplies (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

18 V

Minimum Supply Voltage:

6.5 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Turn-off Time:

.12 us

Turn-on Time:

.12 us

Width:

3.9 mm

Trade Compliance

MC34152D Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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