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MC34152DR2

Onsemi

MC34152DR2 by Onsemi

MC34152DR2 by Onsemi is a MOSFET Gate Driver with 2 functions, operating at 6.5-18V. It has a turn-on/off time of 0.12us and peak output current limit of 1.5A. Ideal for commercial applications requiring high side drivers in compact spaces due to its small outline package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 7,830 parts In-Stock

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Vyrian

USA . 1,710 parts In-Stock

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Digiode

USA . 379 parts In-Stock

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379

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Bristol Electronics

USA . 172 parts In-Stock

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RC Electronics

USA . 50,000 parts In-Stock

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$1.150

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$1.080

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$1.060

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$1.150

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$1.060

Problanco Electronics

Mexico . 8,389 parts In-Stock

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Kulean Microsystems

USA . 5,913 parts In-Stock

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TANS Electronics

Latvia . 4,882 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,643 parts In-Stock

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Corphita

USA . 2,316 parts In-Stock

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Infinite Electronics LLP (Excess)

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SupplyDigital Components

Austria . 1,880 parts In-Stock

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Corohmni

South Africa . 428 parts In-Stock

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Microchip USA

USA . 326 parts In-Stock

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UHIMA Technologies

Türkiye . 202 parts In-Stock

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Overview

Enhance your electronic projects with the MC34152DR2 MOSFET Gate Driver by Onsemi. Manufactured with top-notch quality and reliability, this product offers a range of applications for your circuit designs. Experience seamless integration and superior performance with its advanced technology and dual functionality. With a wide supply voltage range and fast response times, this gate driver provides unmatched value and benefits to customers looking to optimize their systems. Trust Onsemi for high-quality components that deliver results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the gate driver lightweight and cost-effective.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation on a PCB.

Maximum Supply Voltage: 18 V

Can handle high supply voltages, offering flexibility in various applications.

No. of Functions: 2

Multiple functions in a single device can simplify circuit design and save space.

Minimum Supply Voltage: 6.5 V

Can operate at relatively low supply voltages, suitable for a wide range of applications.

Maximum Operating Temperature: 70 °C

Can withstand high operating temperatures, ensuring reliability in harsh environments.

Nominal Output Peak Current Limit: 1.5 A

Capable of delivering high peak currents, suitable for driving power MOSFETs.

Technical Specifications

MOSFET Gate Drivers MC34152DR2 attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Terminals:

8

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Nominal Output Peak Current Limit:

1.5 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

18 V

Minimum Supply Voltage:

6.5 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Turn-off Time:

.12 us

Turn-on Time:

.12 us

Width:

3.9 mm

Trade Compliance

MC34152DR2 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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