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MC33502DG

Onsemi

MC33502DG by Onsemi

MC33502DG by Onsemi is a dual operational amplifier with 7000uV max input offset voltage and 75dB nominal CMRR. Ideal for industrial applications, it operates at -40 to 105°C with low bias current of 0.01uA. Package style is small outline, making it suitable for compact designs requiring high gain bandwidth of 5000kHz.

Median Price

$1.464

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

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$1.464

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50

$1.464

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Chip Stock

USA . 70,000 parts In-Stock

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Vyrian

USA . 9,661 parts In-Stock

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Digiode

USA . 1,504 parts In-Stock

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1,504

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bastille Electronics

Australia . 100 parts In-Stock

1+ parts

$1.464

100+ parts

$1.391

1k+ parts

$1.321

10k+ parts

$1.303

100

$1.464

$1.391

$1.321

$1.303

Ampacity Inc.

Singapore . 602 parts In-Stock

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$4.410

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602

$4.410

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AZTECH Wire

Italy . 671 parts In-Stock

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$10.280

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671

$10.280

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TANS Electronics

Latvia . 7,491 parts In-Stock

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Kulean Microsystems

USA . 7,198 parts In-Stock

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Problanco Electronics

Mexico . 5,588 parts In-Stock

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Corphita

USA . 1,217 parts In-Stock

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Kepictronics

USA . 612 parts In-Stock

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UHIMA Technologies

Türkiye . 581 parts In-Stock

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581

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Microchip USA

USA . 321 parts In-Stock

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321

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SupplyDigital Components

Austria . 147 parts In-Stock

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Corohmni

South Africa . 71 parts In-Stock

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Overview

Experience unmatched precision and reliability with the MC33502DG operational amplifier by Onsemi. As a leading manufacturer in the industry, Onsemi delivers cutting-edge technology that meets the highest standards of quality. Ideal for a wide range of applications, this operational amplifier offers customers a powerful solution with minimal bias current, high common-mode rejection ratio, and a wide temperature range. With the MC33502DG, you can trust in superior performance and exceptional value for all your operational amplifier needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for easy handling and protection of internal components.

Maximum Input Offset Voltage: 7000 uV

Low input offset voltage ensures accurate and precise signal processing.

Surface Mount: YES

Easy to mount on printed circuit boards, saving space and facilitating automated assembly.

Nominal Common Mode Reject Ratio: 75 dB

High common mode rejection ratio helps in minimizing noise interference in the input signals.

Nominal Supply Voltage / Vsup (V): 5

Optimal supply voltage for efficient operation and compatibility with standard power sources.

Temperature Grade: INDUSTRIAL

Suitable for industrial applications with a wide operating temperature range and robust design.

Maximum Seated Height: 1.75 mm

Low profile design for compact installations and space-constrained environments.

Nominal Unity Gain Bandwidth: 5000 kHz

High unity gain bandwidth allows for fast and accurate signal amplification.

Amplifier Type: OPERATIONAL AMPLIFIER

Specifically designed for amplifying and processing signals with high precision and stability.

Technical Specifications

Operational Amplifiers (Op Amps) MC33502DG attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

5 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

75 dB

Input Offset Voltage Limit:

7000 uV

Minimum Voltage Gain:

5000

Nominal Slew Rate:

3 V/us

Peak Bias Current:

10 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

7 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

105 °C (221 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

40 s

Maximum Supply Current:

5 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Packaging and Shipping

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

MC33502DG Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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