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MC33201PG

Onsemi

MC33201PG by Onsemi

MC33201PG by Onsemi is an Operational Amplifier with 9000uV Max Input Offset Voltage, 90dB CMRR, and 25000 Min Voltage Gain. Ideal for industrial applications requiring a Vsup of 5V, it operates b/w -40 to 105 °C with a max supply current of 1.125mA.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Chip Stock

USA . 53,000 parts In-Stock

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Vyrian

USA . 10,837 parts In-Stock

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Digiode

USA . 2,214 parts In-Stock

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LittleDiode

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AZTECH Wire

Italy . 284 parts In-Stock

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$11.500

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Component Stockers USA

USA . 711 parts In-Stock

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$99.990

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Kulean Microsystems

USA . 7,970 parts In-Stock

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SupplyDigital Components

Austria . 6,749 parts In-Stock

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Microchip USA

USA . 4,397 parts In-Stock

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TANS Electronics

Latvia . 4,211 parts In-Stock

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Corphita

USA . 1,568 parts In-Stock

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UHIMA Technologies

Türkiye . 423 parts In-Stock

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Problanco Electronics

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Overview

Discover the MC33201PG operational amplifier by Onsemi, a high-quality component designed to deliver superior performance in various applications. With Onsemi's reputation for reliability and innovation, this op amp offers customers unmatched value, benefits, and advantages. Ideal for industrial settings, the MC33201PG provides precise signal amplification with minimal bias current, ensuring optimal functionality and efficiency. Trust Onsemi to provide cutting-edge technology that meets all your operational amplifier needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and lightweight, making the product suitable for various applications without adding unnecessary weight.

Maximum Input Offset Voltage: 9000 uV

Low input offset voltage ensures accurate signal processing and minimizes errors in the output signal.

Nominal Supply Voltage / Vsup (V): 5

Operating at a common 5V supply voltage makes this product compatible with many standard circuits and power sources.

Minimum Slew Rate: 0.5 V/us

A minimum slew rate of 0.5 V/us allows for fast response time to changes in input signals, making this op amp suitable for dynamic applications.

Nominal Unity Gain Bandwidth: 2200 kHz

Higher bandwidth ensures that the op amp can handle higher frequency signals accurately, making it versatile for a wide range of applications.

Technical Specifications

Operational Amplifiers (Op Amps) MC33201PG attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

2.2 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

90 dB

Input Offset Voltage Limit:

9000 uV

Minimum Voltage Gain:

25000

Minimum Slew Rate:

0.5 V/us

Nominal Slew Rate:

1 V/us

Peak Bias Current:

250 nA

Maximum Bias Current (IIB) @25 °C:

200 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

13 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

105 °C (221 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

1.125 mA

Physical Characteristics

Length:

0.365 in (9.27 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.21 in (5.33 mm)

Total Terminals:

8

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin

Package Body Material:

Plastic/Epoxy

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e3

Packaging and Shipping

Packing Method:

Rail

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

DIP8,.3

Trade Compliance

MC33201PG Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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