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MC33152P

Onsemi

MC33152P by Onsemi

MC33152P by Onsemi is a MOSFET Gate Driver with 2 functions, operating at 6.5-18V. It has a turn-on/off time of 0.12us and peak current limit of 1.5A. Widely used in industrial applications for driving high side MOSFETs efficiently.

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10

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1k+

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Chip Stock

USA . 66,000 parts In-Stock

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Vyrian

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LWI Electronics Inc

India . 350 parts In-Stock

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350

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Nova Conductors

Japan . 300 parts In-Stock

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300

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A2Z Electronics, Inc.

USA . 66 parts In-Stock

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North Shore Components

USA . 65 parts In-Stock

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Digiode

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50

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ACDS - Activité Composants Distribution Service

France . 40 parts In-Stock

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M&R Communications

USA . 26 parts In-Stock

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Legend Electronics Inc.

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Aztec Data Supply Inc.

USA . 3,820 parts In-Stock

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$3.872

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$3.872

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AZTECH Wire

Italy . 311 parts In-Stock

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$11.879

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Ampacity Inc.

Singapore . 126 parts In-Stock

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$14.500

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Semicontronic

India . 1,049 parts In-Stock

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$46.500

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$45.338

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Lixinc

USA . 16,088 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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TANS Electronics

Latvia . 7,648 parts In-Stock

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Continental Prestige Electronics

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Problanco Electronics

Mexico . 5,794 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,583 parts In-Stock

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Microchip USA

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Kulean Microsystems

USA . 2,983 parts In-Stock

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Argo Parts USA

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SupplyDigital Components

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Corohmni

South Africa . 497 parts In-Stock

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Metaverse IC Inc.

Canada . 379 parts In-Stock

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Bastille Electronics

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Corphita

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UHIMA Technologies

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Cyclops Electronics Ltd (Excess)

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Overview

Enhance the performance of your MOSFETs with the MC33152P by Onsemi. This top-notch gate driver offers outstanding quality and reliability, thanks to Onsemi's reputation for excellence in semiconductor manufacturing. Ideal for a wide range of applications, this product provides customers with enhanced efficiency, precision, and control. Experience the value of seamless operation and improved functionality with the MC33152P - the ultimate solution for your gate driver needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this product lightweight and durable, suitable for various applications.

Maximum Supply Voltage: 18 V

With a maximum supply voltage of 18V, this MOSFET gate driver can handle higher voltage levels, making it versatile and capable of powering different circuits.

No. of Functions: 2

Offering 2 functions in one device, this MOSFET gate driver provides added flexibility and simplifies circuit design, making it a convenient choice for engineers.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration with other components, optimizing space and layout in electronic systems.

Power Supplies (V): 12

Operating at a power supply voltage of 12V, this gate driver is efficient and energy-saving, ideal for battery-powered applications.

No. of Terminals: 8

With 8 terminals for connections, this MOSFET gate driver offers multiple input and output options, enhancing connectivity and functionality.

Package Style (Meter): IN-LINE

The in-line package style provides a compact and streamlined design, making it easy to install and suitable for space-constrained environments.

Minimum Supply Voltage: 6.5 V

Operating at a minimum supply voltage of 6.5V ensures compatibility with a wide range of power sources, increasing the versatility of this gate driver.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this gate driver can withstand high-temperature environments, making it reliable for industrial applications.

Minimum Operating Temperature: -40 °C

The ability to operate at temperatures as low as -40°C allows this MOSFET gate driver to be used in extreme cold conditions with optimal performance.

Terminal Finish: TIN LEAD

The tin lead terminal finish ensures good conductivity and solderability, making installation and maintenance of this gate driver hassle-free.

Terminal Position: DUAL

Featuring dual terminal positions, this gate driver allows for flexible mounting options, enhancing the ease of use and installation.

Maximum Seated Height: 4.45 mm

With a maximum seated height of 4.45mm, this MOSFET gate driver is compact and low-profile, suitable for applications with limited space.

Width: 7.62 mm

The 7.62mm width of this gate driver enables efficient PCB layout and compact integration, optimizing the overall design of electronic systems.

High Side Driver: YES

The inclusion of a high-side driver in this MOSFET gate driver allows for enhanced control and protection in applications requiring high-side switching.

Peak Reflow Temperature °C: 235

The peak reflow temperature of 235°C ensures reliability during the soldering process, guaranteeing proper connections and performance.

Length: 9.78 mm

With a length of 9.78mm, this gate driver is space-efficient and can be easily accommodated in various electronic setups.

Temperature Grade: INDUSTRIAL

Designed for industrial-grade performance, this MOSFET gate driver is robust and reliable, suitable for demanding applications in harsh environments.

Technology: BIPOLAR

Utilizing bipolar technology, this gate driver offers high switching speeds and low power consumption, making it an efficient choice for driving MOSFETs.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides secure connections and ease of soldering, ensuring reliable performance and durability.

Nominal Supply Voltage: 12 V

Operating at a nominal supply voltage of 12V, this gate driver is optimized for efficiency and compatibility with standard power sources.

Turn-on Time: 0.12 us

With a turn-on time of 0.12 microseconds, this MOSFET gate driver offers fast switching speed, enabling quick response in circuit operations.

Terminal Pitch: 2.54 mm

The 2.54mm terminal pitch allows for easy connection and compatibility with standard PCB layouts, simplifying installation and integration.

Nominal Output Peak Current Limit: 1.5 A

With a nominal output peak current limit of 1.5A, this gate driver can reliably drive MOSFETs and handle high-current applications with ease.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

Featuring a flexible interface IC type, this MOSFET gate driver can adapt to different circuit requirements and configurations.

Turn-off Time: 0.12 us

The turn-off time of 0.12 microseconds ensures efficient switching and control, enhancing the performance and reliability of this gate driver.

Technical Specifications

MOSFET Gate Drivers MC33152P attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e0

Length:

9.78 mm

No. of Functions:

2

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

1.5 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

235

Power Supplies (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

4.45 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

18 V

Minimum Supply Voltage:

6.5 V

Nominal Supply Voltage:

12 V

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Turn-off Time:

.12 us

Turn-on Time:

.12 us

Width:

7.62 mm

Trade Compliance

MC33152P Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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