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MBRS4201PT3G

Onsemi

MBRS4201PT3G by Onsemi

MBRS4201PT3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.86V and output current of 4A. It has a fast reverse recovery time of 0.035us and is ideal for fast soft recovery power applications. Operating temperature ranges from -55 to 150°C, making it suitable for various electronic devices.

Median Price

$0.700

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,500 parts In-Stock

1+ parts

$0.700

100+ parts

$0.690

1k+ parts

$0.670

10k+ parts

-

2,500

$0.700

$0.690

$0.670

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 962 parts In-Stock

1+ parts

$0.665

100+ parts

-

1k+ parts

-

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962

$0.665

-

-

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Vyrian

USA . 4,240 parts In-Stock

1+ parts

-

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4,240

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Nova Conductors

Japan . 550 parts In-Stock

1+ parts

-

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550

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 2,335 parts In-Stock

1+ parts

$0.055

100+ parts

-

1k+ parts

-

10k+ parts

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2,335

$0.055

-

-

-

Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$0.150

100+ parts

$0.137

1k+ parts

$0.123

10k+ parts

-

2,000

$0.150

$0.137

$0.123

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Ampacity Inc.

Singapore . 2,366 parts In-Stock

1+ parts

$0.590

100+ parts

-

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-

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2,366

$0.590

-

-

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Corphita

USA . 2,133 parts In-Stock

1+ parts

$0.630

100+ parts

-

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2,133

$0.630

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-

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Corohmni

South Africa . 332 parts In-Stock

1+ parts

$0.700

100+ parts

-

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332

$0.700

-

-

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AZTECH Wire

Italy . 731 parts In-Stock

1+ parts

$17.420

100+ parts

-

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731

$17.420

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Kulean Microsystems

USA . 6,229 parts In-Stock

1+ parts

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6,229

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Problanco Electronics

Mexico . 2,783 parts In-Stock

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2,783

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SupplyDigital Components

Austria . 1,921 parts In-Stock

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1,921

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Continental Prestige Electronics

USA . 787 parts In-Stock

1+ parts

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787

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UHIMA Technologies

Türkiye . 559 parts In-Stock

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559

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Argo Parts USA

USA . 453 parts In-Stock

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453

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TANS Electronics

Latvia . 314 parts In-Stock

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314

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Aranea Global

USA . 100 parts In-Stock

1+ parts

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100

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Overview

Discover the MBRS4201PT3G by Onsemi, a premium quality rectifier diode that offers fast soft recovery power for a wide range of applications. Manufactured by Onsemi, a trusted leader in diodes & rectifiers, this product features a Schottky technology design and a maximum non-repetitive peak forward current of 100 A, ensuring reliable performance and efficiency. With a maximum operating temperature of 150°C and a package style of small outline, the MBRS4201PT3G is perfect for high-demand environments where precision and durability are essential. Upgrade your power systems with this exceptional diode and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various applications.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards.

Maximum Reverse Recovery Time: 0.035 us

Enables fast switching and efficient performance.

Maximum Reverse Current: 1000 uA

Ensures minimal leakage current for better energy efficiency.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for industrial applications.

Minimum Operating Temperature: -55 °C

Operates effectively in extreme cold temperatures as well.

Maximum Output Current: 4 A

Can handle high current loads, suitable for power applications.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification purposes in electronic circuits.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching speed compared to traditional diodes.

Technical Specifications

Diodes & Rectifiers MBRS4201PT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

SOFT FACTOR IS 1

Application:

FAST SOFT RECOVERY POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.86 V

JESD-30 Code:

R-PDSO-J2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

1000 uA

Maximum Reverse Recovery Time:

.035 us

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRS4201PT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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