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MBRS410ET3

Onsemi

MBRS410ET3 by Onsemi

MBRS410ET3 by Onsemi is a Schottky rectifier diode with max forward voltage of 0.37V and max output current of 4A. It operates b/w -55 °C to 150°C, ideal for power applications. The package is small outline, surface mountable, with dual terminals made of tin/lead (Sn/Pb).

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Lifecycle Status

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1k+

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AZTECH Wire

Italy . 230 parts In-Stock

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USA . 34,000 parts In-Stock

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TANS Electronics

Latvia . 7,672 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

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Problanco Electronics

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UHIMA Technologies

Türkiye . 721 parts In-Stock

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Overview

Unleash the power of innovation with the MBRS410ET3 by Onsemi, a cutting-edge rectifier diode designed for high-performance applications. Crafted with precision and expertise by Onsemi, this diode offers unmatched quality and reliability. Perfect for power applications, this diode boasts a maximum output current of 4A and a maximum forward voltage of 0.37V, ensuring optimal performance every time. Say goodbye to inefficiency and hello to superior power management with the MBRS410ET3. Elevate your projects to new heights with this top-of-the-line diode from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection for the diode, ensuring durability and reliability.

Surface Mount: YES

Being surface mountable makes the diode easy to integrate into circuit boards, saving space and simplifying assembly.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand a wide range of operating conditions, increasing its versatility.

Maximum Output Current: 4 A

The high maximum output current capability allows this diode to handle heavy loads, making it suitable for power applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is designed to efficiently convert AC to DC, making it ideal for power applications.

Technology: SCHOTTKY

Schottky diodes have a lower forward voltage drop and faster switching speed compared to standard diodes, making this product efficient and high-performance.

Technical Specifications

Diodes & Rectifiers MBRS410ET3 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREEWHEELING DIODE

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.37 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

250 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

10 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRS410ET3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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