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MBRS3201T3

Onsemi

MBRS3201T3 by Onsemi

The Onsemi MBRS3201T3 is a Schottky rectifier diode with a max output current of 3A and forward voltage of 0.59V. It has a fast reverse recovery time of 0.035us, making it ideal for fast soft recovery power applications at temperatures ranging from -55°C to 150°C. The diode comes in a small outline package with dual terminals and surface mount capability.

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5

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1k+

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Digiode

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Prism Electronics

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Ampacity Inc.

Singapore . 1,033 parts In-Stock

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$0.010

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Aztec Data Supply Inc.

USA . 1,921 parts In-Stock

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AZTECH Wire

Italy . 826 parts In-Stock

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Kulean Microsystems

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Continental Prestige Electronics

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TANS Electronics

Latvia . 2,418 parts In-Stock

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Argo Parts USA

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Overview

Experience superior performance and reliability with the MBRS3201T3 diode by Onsemi. As an industry leader in diodes & rectifiers, Onsemi delivers cutting-edge technology and innovation in every product. The MBRS3201T3 is ideal for fast soft recovery power applications, offering a maximum output current of 3A and a maximum forward voltage of just 0.59V. With a package shape of SMALL OUTLINE and a maximum operating temperature of 150°C, this diode is perfect for a wide range of electronic devices. Trust Onsemi to provide quality components that exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the package lightweight and durable, ideal for portable and high reliability applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB mounting, saving space and simplifying assembly processes.

Maximum Reverse Recovery Time: 0.035 us

Fast reverse recovery time ensures efficient switching and minimal power loss, making it suitable for high frequency applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature tolerance allows for reliable performance in a variety of environments and applications.

Diode Type: RECTIFIER DIODE

Rectifier diodes are commonly used in power supply applications, making this product versatile and suitable for various power conversion circuits.

Maximum Forward Voltage (VF): 0.59 V

Low forward voltage drop leads to minimal power dissipation and high efficiency, making this diode ideal for power conversion applications.

Maximum Output Current: 3 A

High output current capability allows for use in applications requiring higher power handling capacity.

Technology: SCHOTTKY

Schottky diodes have fast switching speeds and lower forward voltage drop compared to standard diodes, making them ideal for high frequency and low power loss applications.

Maximum Repetitive Peak Reverse Voltage: 200 V

High reverse voltage rating ensures the diode can handle larger voltage swings, suitable for a wide range of power supply and rectification applications.

Diode Element Material: SILICON

Silicon diodes offer good thermal stability and high temperature resilience, making them reliable and long-lasting in various operating conditions.

Technical Specifications

Diodes & Rectifiers MBRS3201T3 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

FAST SOFT RECOVERY POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.59 V

JEDEC-95 Code:

DO-214AB

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRS3201T3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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