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MBRS140LT3G

Onsemi

MBRS140LT3G by Onsemi

MBRS140LT3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.425V and output current of 1A. It operates b/w -55°C to 125°C, making it suitable for various applications requiring high-speed switching and low power loss in a small outline package. The diode's peak repetitive reverse voltage is 40V, ideal for circuits where efficiency and reliability are crucial.

Median Price

$0.350

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

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Mobius Materials

USA . 4,660 parts In-Stock

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$0.112

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$0.089

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DF Sales Co.

USA . 1,217 parts In-Stock

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DF Sales Co.

USA . 1,217 parts In-Stock

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Vyrian

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A&K Electronics

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Bristol Electronics

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Digiode

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Rebound Electronics

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ACDS - Activité Composants Distribution Service

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Sunrise Surplus Inc.

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ComSIT Distribution GmbH

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Nova Conductors

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Prism Electronics

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Semicontronic

India . 1,167 parts In-Stock

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$0.010

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$0.010

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Ampacity Inc.

Singapore . 415 parts In-Stock

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Aztec Data Supply Inc.

USA . 243 parts In-Stock

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$0.034

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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$0.093

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Corohmni

South Africa . 265 parts In-Stock

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AZTECH Wire

Italy . 727 parts In-Stock

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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CPlus Electronics

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QUARKTWIN TECHNOLOGY LTD

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Continental Prestige Electronics

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Authorized Procurement Solutions

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Problanco Electronics

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Lixinc

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RC Electronics

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Kulean Microsystems

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Glotronic Ltd.

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UHIMA Technologies

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Overview

Enhance your electronic projects with the MBRS140LT3G by Onsemi, a top-quality rectifier diode that offers unmatched performance and reliability. Manufactured by Onsemi, a leader in the industry, this diode ensures precision and efficiency in every application. Whether you're working on power supplies, converters, or voltage regulators, this diode is the perfect choice for seamless operation. Trust in Onsemi's reputation for excellence and choose the MBRS140LT3G to unlock the full potential of your electronics projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various applications.

Config: SINGLE

Simplifies the design and installation process, making it convenient for users.

Surface Mount: YES

Allows for easy and secure mounting on PCBs, saving space and simplifying assembly.

Package Shape: RECTANGULAR

Provides a uniform and standard shape, making it compatible with common electronic components.

No. of Terminals: 2

Simplifies the connection process, reducing complexity for users.

Package Style (Meter): SMALL OUTLINE

Saves space on the PCB and allows for efficient use of board real estate.

Maximum Operating Temperature: 125 °C

Ensures reliable performance even in high-temperature environments.

Minimum Operating Temperature: -55 °C

Suitable for use in extreme cold conditions without compromising functionality.

Terminal Finish: TIN

Provides good electrical conductivity and corrosion resistance for reliable connections.

Terminal Position: DUAL

Allows for flexibility in installation and connection options.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures that the diode can withstand reflow soldering processes without damage.

Peak Reflow Temperature °C: 260

Withstands high reflow temperatures during assembly, ensuring product reliability.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification applications, ensuring efficient conversion of AC to DC.

Maximum Forward Voltage (VF): 0.425 V

Provides low voltage drop during forward conduction, maximizing efficiency.

Maximum Output Current: 1 A

Supports high current applications, making it versatile for different applications.

Technology: SCHOTTKY

Utilizes Schottky technology for low forward voltage drop and fast switching speeds.

Terminal Form: C BEND

Offers a secure and reliable connection with PCBs, reducing the risk of disconnection.

Maximum Repetitive Peak Reverse Voltage: 40 V

Suitable for applications requiring reverse polarity protection up to 40 volts.

Maximum Non Repetitive Peak Forward Current: 40 A

Capable of handling high peak currents, making it suitable for surge protection applications.

Diode Element Material: SILICON

Utilizes silicon as the diode element material for high reliability and performance.

Technical Specifications

Diodes & Rectifiers MBRS140LT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.425 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

40 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRS140LT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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