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MBRF30L60CTG

Onsemi

MBRF30L60CTG by Onsemi

MBRF30L60CTG by Onsemi is a Schottky rectifier diode with 2 elements, common cathode config, and max output current of 15A. It operates b/w -55 to 150 °C and has a max repetitive peak reverse voltage of 60V. Ideal for efficiency applications due to its low forward voltage of 0.81V.

Median Price

$1.210

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 478 parts In-Stock

1+ parts

$2.450

100+ parts

$1.076

1k+ parts

$0.794

10k+ parts

$0.694

478

$2.450

$1.076

$0.794

$0.694

Mouser Electronics

USA . 349 parts In-Stock

1+ parts

$2.450

100+ parts

$1.070

1k+ parts

$0.862

10k+ parts

$0.794

349

$2.450

$1.070

$0.862

$0.794

Flip Electronics (Authorized)

USA . 13,050 parts In-Stock

1+ parts

-

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13,050

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-

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Rochester

USA . 810 parts In-Stock

1+ parts

-

100+ parts

$0.943

1k+ parts

$0.782

10k+ parts

$0.698

810

-

$0.943

$0.782

$0.698

Verical

USA . 800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.978

10k+ parts

$0.872

800

-

-

$0.978

$0.872

EBV Elektronik

Germany . 750 parts In-Stock

1+ parts

-

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-

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750

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Chip1Stop

Japan . 300 parts In-Stock

1+ parts

-

100+ parts

$1.210

1k+ parts

$0.876

10k+ parts

-

300

-

$1.210

$0.876

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,008 parts In-Stock

1+ parts

$0.732

100+ parts

-

1k+ parts

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2,008

$0.732

-

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Flip Electronics

USA . 5,000 parts In-Stock

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5,000

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Vyrian

USA . 3,540 parts In-Stock

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3,540

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NAC Semi

USA . 600 parts In-Stock

1+ parts

-

100+ parts

$3.840

1k+ parts

$3.490

10k+ parts

-

600

-

$3.840

$3.490

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 662 parts In-Stock

1+ parts

$0.694

100+ parts

-

1k+ parts

-

10k+ parts

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662

$0.694

-

-

-

Corohmni

South Africa . 209 parts In-Stock

1+ parts

$0.771

100+ parts

-

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209

$0.771

-

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Microchip USA

USA . 8,902 parts In-Stock

1+ parts

$11.310

100+ parts

-

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8,902

$11.310

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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7,000

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TANS Electronics

Latvia . 4,807 parts In-Stock

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4,807

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Problanco Electronics

Mexico . 4,576 parts In-Stock

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4,576

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Kulean Microsystems

USA . 3,022 parts In-Stock

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3,022

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SupplyDigital Components

Austria . 2,818 parts In-Stock

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2,818

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Perfect Parts

USA . 1,872 parts In-Stock

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1,872

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Kepictronics

USA . 950 parts In-Stock

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950

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Eastek

USA . 900 parts In-Stock

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900

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GreenTree Electronics

Israel . 900 parts In-Stock

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900

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UHIMA Technologies

Türkiye . 676 parts In-Stock

1+ parts

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100+ parts

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676

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Overview

Discover the MBRF30L60CTG by Onsemi, a high-quality diode and rectifier that offers exceptional efficiency in various applications. Manufactured by Onsemi, a reputable company known for producing reliable electronic components, this product boasts a common cathode configuration with two elements for superior performance. With a maximum output current of 15A and maximum repetitive peak reverse voltage of 60V, this Schottky diode is designed to deliver optimal results. Whether you're working on power supplies, converters, or inverters, the MBRF30L60CTG provides value, benefits, and advantages that will exceed your expectations. Choose Onsemi for cutting-edge technology and dependable solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight construction makes the product suitable for various applications.

Maximum Reverse Current: 350 uA

Low reverse current ensures efficient operation and minimizes power loss.

Package Shape: RECTANGULAR

Compact shape allows for easy integration into circuit designs.

Maximum Operating Temperature: 150 °C

Wide operating temperature range makes the diode suitable for different environments.

Diode Type: RECTIFIER DIODE

Rectifier diodes are designed for converting AC to DC, making the product versatile for use in power supply applications.

Maximum Forward Voltage (VF): 0.81 V

Low forward voltage drop ensures efficient conversion of power.

Maximum Output Current: 15 A

High output current capability allows the diode to handle heavy loads.

Technology: SCHOTTKY

Schottky diodes have fast switching speeds and low voltage drop, making them ideal for high-frequency applications.

Maximum Repetitive Peak Reverse Voltage: 60 V

High reverse voltage rating provides protection against voltage spikes and transients.

Diode Element Material: SILICON

Silicon material ensures reliable and consistent performance over a wide range of operating conditions.

Technical Specifications

Diodes & Rectifiers MBRF30L60CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.81 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

240 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

350 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

MBRF30L60CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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