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MBRF20100CTG

Onsemi

MBRF20100CTG by Onsemi

MBRF20100CTG by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max output current of 10A. It operates in temperatures ranging from -65°C to 175°C and has a max repetitive peak reverse voltage of 100V. Ideal for power applications due to its high efficiency and low forward voltage drop.

Median Price

$0.855

Lifecycle Status

Suppliers In-Stock

30

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 66 parts In-Stock

1+ parts

$0.855

100+ parts

$0.759

1k+ parts

$0.737

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$0.735

66

$0.855

$0.759

$0.737

$0.735

Mouser Electronics

USA . 7,096 parts In-Stock

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$2.100

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$0.857

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DigiKey

USA . 1,209 parts In-Stock

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$0.909

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$0.664

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1,209

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Farnell

UK . 109,744 parts In-Stock

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$0.625

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$0.386

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$0.377

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Rochester

USA . 89,194 parts In-Stock

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$0.763

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Verical

USA . 63,942 parts In-Stock

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Arrow

USA . 8,800 parts In-Stock

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$0.607

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$0.598

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$0.571

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Master Electronics

USA . 3,040 parts In-Stock

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$0.980

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USA . 1,150 parts In-Stock

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Digiode

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Nova Conductors

Japan . 60 parts In-Stock

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TME

Poland . 108 parts In-Stock

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DigiKey Marketplace

USA . 127,629 parts In-Stock

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Vyrian

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Chip Stock

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IBS Electronics

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Bristol Electronics

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ACDS - Activité Composants Distribution Service

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NAC Semi

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Pegasus Components GmbH

Germany . 50 parts In-Stock

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Microfarads

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Prism Electronics

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LittleDiode

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Aztec Data Supply Inc.

USA . 2,521 parts In-Stock

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Corohmni

South Africa . 292 parts In-Stock

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Corphita

USA . 1,066 parts In-Stock

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Continental Prestige Electronics

USA . 64,802 parts In-Stock

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$0.730

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$0.715

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Argo Parts USA

USA . 5,769 parts In-Stock

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$0.730

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Netroflash

USA . 100 parts In-Stock

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$0.693

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$0.679

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Ampacity Inc.

Singapore . 27,385 parts In-Stock

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$0.980

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Microchip USA

USA . 7,091 parts In-Stock

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$10.600

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$10.530

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$10.500

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$10.460

7,091

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$10.460

Perfect Parts

USA . 121,481 parts In-Stock

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RC Electronics

USA . 65,005 parts In-Stock

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$0.760

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$0.690

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$0.670

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Metaverse IC Inc.

Canada . 30,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 8,670 parts In-Stock

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Lixinc

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TANS Electronics

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Kulean Microsystems

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SupplyDigital Components

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Authorized Procurement Solutions

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Problanco Electronics

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Futuretech Components

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iodParts Technologies Inc.

India . 399 parts In-Stock

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Infinite Electronics LLP (Excess)

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UHIMA Technologies

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Overview

Experience the unmatched quality and reliability of Onsemi with the MBRF20100CTG diode rectifier. Designed for power applications, this common cathode diode offers a maximum output current of 10A and a maximum repetitive peak reverse voltage of 100V. With its Schottky technology and matte tin terminal finish, this rectangular package is perfect for flange mount installations. Trust in Onsemi to deliver superior performance and efficiency, making your projects easier and more cost-effective. Elevate your designs with the MBRF20100CTG diode rectifier today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, making it suitable for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with two elements allows for efficient power distribution and handling.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to mount and integrate into different electronic circuits or systems.

No. of Terminals: 3

Three terminals ensure stable connectivity and secure attachment within the circuit.

Package Style: FLANGE MOUNT

Flange mount style offers secure attachment and stable positioning for power applications.

Application: POWER

Designed for power applications, ensuring reliable performance and efficient power management.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures reliability and stability even under challenging conditions.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature allows for a wide range of applications in different environments.

Terminal Finish: MATTE TIN

Matte tin finish provides corrosion resistance and ensures a reliable electrical connection.

Terminal Position: SINGLE

Single terminal position simplifies installation and ensures consistent performance.

Case Connection: ISOLATED

Isolated case connection ensures safety and prevents electrical interference in the circuit.

Diode Type: RECTIFIER DIODE

Rectifier diode is ideal for converting AC to DC, making it suitable for power supply applications.

Maximum Forward Voltage (VF): 0.75 V

Low forward voltage drop ensures efficient power conversion and reduced power losses.

Maximum Output Current: 10 A

High output current rating allows for handling high power loads with ease.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and low power loss, ideal for high-frequency applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides secure soldering and strong mechanical attachment.

No. of Elements: 2

Two elements allow for improved efficiency and performance in the circuit.

Maximum Repetitive Peak Reverse Voltage: 100 V

High reverse voltage rating protects the diode from voltage spikes and ensures durability.

Maximum Non Repetitive Peak Forward Current: 150 A

High non-repetitive peak forward current rating allows for handling surge currents without damage.

Diode Element Material: SILICON

Silicon material provides high temperature tolerance and reliable electrical characteristics for the diode.

Technical Specifications

Diodes & Rectifiers MBRF20100CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Case Connection:

ISOLATED

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.75 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

MBRF20100CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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