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MBRF2545CTG

Onsemi

MBRF2545CTG by Onsemi

MBRF2545CTG by Onsemi is a Schottky rectifier diode with 45V peak reverse voltage, 12.5A output current, and 0.82V forward voltage. Commonly used in power applications due to its isolated case connection and high operating temperature range (-65°C to 175°C).

Median Price

$1.638

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

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Adafruit Industries

USA . 50 parts In-Stock

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$0.823

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$0.823

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$0.823

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50

$0.823

$0.823

$0.823

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Mouser Electronics

USA . 298 parts In-Stock

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$2.350

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$1.020

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$0.802

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$0.761

298

$2.350

$1.020

$0.802

$0.761

DigiKey

USA . 211 parts In-Stock

1+ parts

$2.350

100+ parts

$1.030

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$0.757

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$0.657

211

$2.350

$1.030

$0.757

$0.657

Rochester

USA . 114,967 parts In-Stock

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Verical

USA . 94,935 parts In-Stock

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$0.825

Avnet

USA . 950 parts In-Stock

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EBV Elektronik

Germany . 100 parts In-Stock

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Digiode

USA . 940 parts In-Stock

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$0.694

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940

$0.694

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Nova Conductors

Japan . 610 parts In-Stock

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$0.838

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610

$0.838

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TME

Poland . 591 parts In-Stock

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$2.170

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$1.070

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Vyrian

USA . 35,216 parts In-Stock

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Chip Stock

USA . 14,270 parts In-Stock

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NAC Semi

USA . 550 parts In-Stock

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$3.340

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$3.080

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$3.340

$3.080

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IBS Electronics

USA . 183 parts In-Stock

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$1.031

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$0.975

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183

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$1.031

$0.975

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PC Components Company LLC

USA . 50 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 791 parts In-Stock

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$0.082

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791

$0.082

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Corphita

USA . 614 parts In-Stock

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$0.657

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614

$0.657

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Corohmni

South Africa . 247 parts In-Stock

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$0.730

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$0.730

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Argo Parts USA

USA . 6,366 parts In-Stock

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$0.770

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$0.770

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Continental Prestige Electronics

USA . 4,502 parts In-Stock

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$0.770

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$0.755

4,502

$0.770

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$0.755

Advanced Electronics

New Zealand . 50 parts In-Stock

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$0.823

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$0.823

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$0.823

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50

$0.823

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Netroflash

USA . 2,000 parts In-Stock

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$0.838

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$0.821

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$0.838

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Semicontronic

India . 35,304 parts In-Stock

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$1.350

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$1.316

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$1.310

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Microchip USA

USA . 3,760 parts In-Stock

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$10.660

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$10.590

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$10.560

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$10.530

3,760

$10.660

$10.590

$10.560

$10.530

Component Stockers USA

USA . 665 parts In-Stock

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$99.990

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Kulean Microsystems

USA . 8,353 parts In-Stock

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Problanco Electronics

Mexico . 7,016 parts In-Stock

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SupplyDigital Components

Austria . 5,468 parts In-Stock

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Perfect Parts

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Lixinc

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TANS Electronics

Latvia . 1,684 parts In-Stock

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Authorized Procurement Solutions

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Kepictronics

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iodParts Technologies Inc.

India . 355 parts In-Stock

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UHIMA Technologies

Türkiye . 326 parts In-Stock

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GreenTree Electronics

Israel . 67 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 67 parts In-Stock

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Overview

Enhance the power and efficiency of your electronic devices with the MBRF2545CTG by Onsemi. Known for their superior quality and reliability, Onsemi's diodes and rectifiers are a top choice for power applications. The MBRF2545CTG features a common cathode configuration with two elements, providing a maximum output current of 12.5 A and a maximum repetitive peak reverse voltage of 45 V. With its Schottky technology and matte tin terminal finish, this product offers exceptional performance and durability. Upgrade your power systems with the MBRF2545CTG and experience the difference in efficiency and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the diodes, ensuring a longer lifespan.

Configuration: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for efficient power conversion and handling of higher currents.

Package Shape: RECTANGULAR

Rectangular package shape makes it easy to install and mount in various applications.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand high heat environments without compromising performance.

Technology: SCHOTTKY

Schottky diode technology ensures low forward voltage drop and fast switching, making it ideal for power applications.

Technical Specifications

Diodes & Rectifiers MBRF2545CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Case Connection:

ISOLATED

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.82 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

12.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

45 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

MBRF2545CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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