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MBR6045WT

Onsemi

MBR6045WT by Onsemi

The Onsemi MBR6045WT is a Schottky rectifier diode with 45V max reverse voltage and 30A max output current. It has a common cathode configuration, suitable for power applications up to 150 °C. The package style is flange mount with tin/lead terminal finish, making it ideal for high-power circuit designs.

Median Price

$4.045

Lifecycle Status

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29

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1k+

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DigiKey

USA . 5,524 parts In-Stock

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$3.840

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$1.749

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$1.153

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$1.153

Mouser Electronics

USA . 12,370 parts In-Stock

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$4.910

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$2.350

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Verical

USA . 1,410 parts In-Stock

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TEDSS.com

USA . 10 parts In-Stock

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Digiode

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Vyrian

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American Microsemiconductor Inc.

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ComSIT Distribution GmbH

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MISTER SPROCKETS

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NAC Semi

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Sea View Technologies

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Odintec Ltd.

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Bristol Electronics

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Electronics Depot

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PC Components Company LLC

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ACDS - Activité Composants Distribution Service

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LWI Electronics Inc

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Mil-Aero Solutions, Inc.

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Resion

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Zilex Electronics Inc.

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LIBRA Elektronik GmbH

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Electronic Expediters

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M&R Communications

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Advanced Electronics

New Zealand . 4,153 parts In-Stock

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$0.241

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$0.238

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$0.229

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Corohmni

South Africa . 365 parts In-Stock

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Component Stockers USA

USA . 356 parts In-Stock

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Corphita

USA . 198 parts In-Stock

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Metaverse IC Inc.

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SupplyDigital Components

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Kulean Microsystems

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Marpe Global Electronics

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Microchip USA

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QualityLine Systems

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Glotronic Ltd.

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XL Components Corporation

Australia . 1,294 parts In-Stock

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UHIMA Technologies

Türkiye . 565 parts In-Stock

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Problanco Electronics

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GreenTree Electronics

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Overview

Discover the power of the MBR6045WT by Onsemi, a high-quality diode and rectifier that offers superior performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this product is ideal for power applications and features a common cathode configuration with two elements for efficient operation. With a maximum output current of 30A and a maximum repetitive peak reverse voltage of 45V, this Schottky diode provides customers with exceptional value and benefits. Upgrade your power systems with the MBR6045WT and experience the advantage of top-notch quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and thermal conductivity, ensuring reliability and safety in power applications.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for easier circuit design and efficient power handling.

Package Shape: RECTANGULAR

Rectangular shape is compact and space-efficient, ideal for power applications where size is a concern.

Application: POWER

Designed specifically for power applications, ensuring optimal performance and efficiency.

Diode Type: RECTIFIER DIODE

Rectifier diode type ensures high efficiency in converting AC to DC power, making it suitable for power supply circuits.

Maximum Output Current: 30 A

High maximum output current of 30 A allows for handling of heavy loads and power requirements.

Technology: SCHOTTKY

Schottky technology results in lower forward voltage drop and faster switching, improving overall performance of the diode.

Maximum Repetitive Peak Reverse Voltage: 45 V

With a maximum repetitive peak reverse voltage of 45 V, this diode is suitable for medium power applications.

Maximum Non Repetitive Peak Forward Current: 500 A

High maximum non-repetitive peak forward current of 500 A allows for handling of surge currents without damage.

Technical Specifications

Diodes & Rectifiers MBR6045WT attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

TO-247AC

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

500 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

45 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR6045WT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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