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MBR6045PTG

Onsemi

MBR6045PTG by Onsemi

MBR6045PTG by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and peak reverse voltage of 45V. It operates b/w -65 °C to 175°C, suitable for high-efficiency applications. With a max output current of 30A and non-repetitive peak forward current of 500A, it offers reliable performance in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

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Vyrian

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Bristol Electronics

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Problanco Electronics

Mexico . 7,998 parts In-Stock

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Kulean Microsystems

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TANS Electronics

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SupplyDigital Components

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Corphita

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UHIMA Technologies

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Corohmni

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Overview

Discover the superior quality and efficiency of the MBR6045PTG diode & rectifier by Onsemi. With a common cathode configuration and two elements, this product is designed for high performance applications where reliability is key. From its plastic/epoxy package body material to its Schottky technology, this diode offers maximum output current of 30A with a peak repetitive peak reverse voltage of 45V. Trust Onsemi's expertise in semiconductor manufacturing to deliver a product that exceeds expectations, providing value and benefits to customers in need of top-tier rectification solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection, making the diode reliable for long-term use.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for easy and efficient circuit integration with other components.

Package Shape: RECTANGULAR

Facilitates easy mounting and placement within circuit boards or electronic devices.

No. of Terminals: 3

Simplifies the connection process and reduces chances of wiring errors.

Package Style (Meter): FLANGE MOUNT

Enables secure mounting and stability, especially in industrial or high-vibration environments.

Application: EFFICIENCY

Designed for applications where energy efficiency is crucial, ensuring optimal performance.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, suitable for various operating conditions.

Minimum Operating Temperature: -65 °C

Able to operate in extremely low temperatures, offering versatility in different environments.

Terminal Finish: TIN

Enhances conductivity and ensures reliable connections for efficient current flow.

Terminal Position: SINGLE

Simplifies installation and reduces chances of connection errors.

Case Connection: CATHODE

Provides a common connection point for the diode elements, simplifying circuit design and assembly.

Peak Reflow Temperature °C: 260

Can withstand high peak temperatures during soldering or reflow processes without damage.

Diode Type: RECTIFIER DIODE

Specifically designed for converting alternating current (AC) to direct current (DC), essential in many electronic applications.

Maximum Output Current: 30 A

Capable of handling high current loads, suitable for power applications.

Technology: SCHOTTKY

Offers fast switching speeds and low forward voltage drop, ideal for high-frequency and high-efficiency circuits.

Terminal Form: THROUGH-HOLE

Facilitates easy installation on circuit boards and ensures secure connections.

No. of Elements: 2

Provides dual functionality in a single package, offering space-saving design.

Maximum Repetitive Peak Reverse Voltage: 45 V

Can handle high reverse voltages, ensuring protection against reverse polarity.

Maximum Non Repetitive Peak Forward Current: 500 A

Capable of handling high forward currents for short durations, suitable for surge protection.

Diode Element Material: SILICON

Known for its high thermal conductivity and stability, ensuring reliable diode performance over extended periods.

Technical Specifications

Diodes & Rectifiers MBR6045PTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

TO-218AC

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

500 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

45 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

MBR6045PTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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