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MBR6045WT-G

Sangdest Microelectronics (Nanjing)

MBR6045WT-G by Sangdest Microelectronics (Nanjing)

MBR6045WT-G by Sangdest Microelectronics is a Schottky rectifier diode with 30A output current and 432A peak forward current. It features a common cathode configuration, 2 elements in a rectangular package for flange mount applications. Ideal for high-power electronic circuits requiring efficient rectification.

Median Price

$1.731

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,680 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.731

10k+ parts

$1.717

1,680

-

-

$1.731

$1.717

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 592 parts In-Stock

1+ parts

$4.277

100+ parts

-

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592

$4.277

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Vyrian

USA . 1,190 parts In-Stock

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1,190

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Digiode

USA . 1,128 parts In-Stock

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Bristol Electronics

USA . 2 parts In-Stock

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2

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 14,815 parts In-Stock

1+ parts

$0.186

100+ parts

$0.186

1k+ parts

$0.186

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-

14,815

$0.186

$0.186

$0.186

-

Semicontronic

India . 1,406 parts In-Stock

1+ parts

$1.470

100+ parts

$1.433

1k+ parts

$1.426

10k+ parts

-

1,406

$1.470

$1.433

$1.426

-

Ampacity Inc.

Singapore . 1,331 parts In-Stock

1+ parts

$1.470

100+ parts

-

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1,331

$1.470

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Corohmni

South Africa . 153 parts In-Stock

1+ parts

$1.731

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153

$1.731

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Argo Parts USA

USA . 8,157 parts In-Stock

1+ parts

$4.277

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8,157

$4.277

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Continental Prestige Electronics

USA . 4,747 parts In-Stock

1+ parts

$4.277

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$4.191

4,747

$4.277

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$4.191

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$4.277

100+ parts

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2,000

$4.277

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Bastille Electronics

Australia . 450 parts In-Stock

1+ parts

$4.277

100+ parts

$4.063

1k+ parts

$3.860

10k+ parts

$3.807

450

$4.277

$4.063

$3.860

$3.807

Component Stockers USA

USA . 391 parts In-Stock

1+ parts

$99.990

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391

$99.990

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Perfect Parts

USA . 25,538 parts In-Stock

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25,538

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Lixinc

USA . 15,568 parts In-Stock

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Problanco Electronics

Mexico . 7,554 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,149 parts In-Stock

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7,149

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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7,000

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Corphita

USA . 2,393 parts In-Stock

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TANS Electronics

Latvia . 986 parts In-Stock

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986

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SupplyDigital Components

Austria . 632 parts In-Stock

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632

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Kulean Microsystems

USA . 451 parts In-Stock

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451

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UHIMA Technologies

Türkiye . 419 parts In-Stock

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419

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Kepictronics

USA . 270 parts In-Stock

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270

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iodParts Technologies Inc.

India . 20 parts In-Stock

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20

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Overview

Discover the unrivaled performance and reliability of the MBR6045WT-G by Sangdest Microelectronics (Nanjing). Crafted with precision and expertise, this rectifier diode offers exceptional quality and efficiency for a wide range of applications. With a maximum output current of 30 A and technology like SCHOTTKY, this diode ensures optimal performance and longevity. Trust in Sangdest Microelectronics (Nanjing) to deliver top-tier products that exceed expectations and provide unparalleled value to customers. Elevate your projects with the MBR6045WT-G and experience the difference that quality manufacturing can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection to the diodes, ensuring a longer lifespan for the product.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for efficient current flow and voltage regulation in the circuit.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to mount and integrate into different electronic systems or circuits.

Maximum Output Current: 30 A

High maximum output current rating of 30 A enables the diodes to handle heavy loads without overheating or malfunctioning.

Technology: SCHOTTKY

Schottky technology ensures low forward voltage drop and fast switching speeds, making the diodes suitable for high-frequency applications.

Maximum Non Repetitive Peak Forward Current: 432 A

High peak forward current rating of 432 A allows the diodes to withstand sudden surge currents without getting damaged.

Diode Element Material: SILICON

Silicon diode element material offers high efficiency and reliability in converting AC to DC current, making the product a dependable choice for various electronic designs.

Technical Specifications

Diodes & Rectifiers MBR6045WT-G attributes and parameters. Explore more Diodes & Rectifiers devices from Sangdest Microelectronics (Nanjing)

Specs

Additional Features:

FREE WHEELING DIODE, HIGH RELIABILITY

Application:

GENERAL PURPOSE

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

432 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

MBR6045WT-G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Sangdest Microelectronics (Nanjing)

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 48,254 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, Analog, MEMS and Sensors Group

Marco Cassis

President, Automotive and Discrete Group

Marco Maria Monti

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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