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MBR2030CTLG

Onsemi

MBR2030CTLG by Onsemi

MBR2030CTLG by Onsemi is a Schottky rectifier diode with common cathode configuration. It has a max forward voltage of 0.58V and can handle up to 10A output current. Ideal for applications requiring high efficiency, it operates b/w -65°C to 175°C temperature range.

Median Price

$2.370

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 11,840 parts In-Stock

1+ parts

$2.327

100+ parts

$1.446

1k+ parts

$1.216

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11,840

$2.327

$1.446

$1.216

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Arrow

USA . 11,838 parts In-Stock

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$2.370

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11,838

$2.370

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Mouser Electronics

USA . 98 parts In-Stock

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$2.440

100+ parts

$1.510

1k+ parts

$1.240

10k+ parts

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98

$2.440

$1.510

$1.240

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DigiKey

USA . 109 parts In-Stock

1+ parts

$3.260

100+ parts

$1.474

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109

$3.260

$1.474

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Flip Electronics (Authorized)

USA . 12,000 parts In-Stock

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12,000

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Verical

USA . 11,838 parts In-Stock

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11,838

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Rochester

USA . 10 parts In-Stock

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100+ parts

$1.390

1k+ parts

$1.150

10k+ parts

$1.030

10

-

$1.390

$1.150

$1.030

Distributors (In-Stock)

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Digiode

USA . 1,178 parts In-Stock

1+ parts

$1.083

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-

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1,178

$1.083

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Nova Conductors

Japan . 460 parts In-Stock

1+ parts

$1.262

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460

$1.262

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Flip Electronics

USA . 12,000 parts In-Stock

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Vyrian

USA . 5,216 parts In-Stock

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Chip Stock

USA . 2,728 parts In-Stock

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2,728

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Bristol Electronics

USA . 450 parts In-Stock

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450

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Semi Source

USA . 222 parts In-Stock

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222

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Distributors (Availability)

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Corphita

USA . 1,469 parts In-Stock

1+ parts

$1.026

100+ parts

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1,469

$1.026

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Corohmni

South Africa . 199 parts In-Stock

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$1.140

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199

$1.140

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Continental Prestige Electronics

USA . 8,773 parts In-Stock

1+ parts

$1.262

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$1.237

8,773

$1.262

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$1.237

Argo Parts USA

USA . 5,398 parts In-Stock

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$1.262

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5,398

$1.262

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Netroflash

USA . 2,500 parts In-Stock

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$1.262

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2,500

$1.262

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Ampacity Inc.

Singapore . 6,591 parts In-Stock

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$2.110

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6,591

$2.110

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Perfect Parts

USA . 15,720 parts In-Stock

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Kepictronics

USA . 15,000 parts In-Stock

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Microchip USA

USA . 9,200 parts In-Stock

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SupplyDigital Components

Austria . 6,850 parts In-Stock

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TANS Electronics

Latvia . 6,811 parts In-Stock

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Problanco Electronics

Mexico . 4,438 parts In-Stock

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Kulean Microsystems

USA . 3,002 parts In-Stock

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Authorized Procurement Solutions

USA . 1,049 parts In-Stock

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ChipTracer

USA . 450 parts In-Stock

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UHIMA Technologies

Türkiye . 108 parts In-Stock

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GreenTree Electronics

Israel . 50 parts In-Stock

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Overview

Experience the superior quality and reliability of the MBR2030CTLG diode by Onsemi, a trusted name in the industry. This diode offers unmatched efficiency and performance, making it ideal for a wide range of applications. With a common cathode configuration and Schottky technology, this diode provides a maximum output current of 10A and a maximum forward voltage of only 0.58V. Trust Onsemi to deliver cutting-edge solutions that meet your needs and exceed your expectations. Elevate your projects with the MBR2030CTLG diode today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the diodes, ensuring a longer lifespan.

No. of Terminals: 3

Having 3 terminals allows for easy and secure connection in circuits, reducing the chances of loose connections.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode is suitable for a wide range of applications, even in harsh environments.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for converting AC to DC, making this product ideal for power supply and efficiency applications.

Maximum Forward Voltage (VF): 0.58 V

A low forward voltage drop means less power loss and higher efficiency in the circuit.

Technical Specifications

Diodes & Rectifiers MBR2030CTLG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.58 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

MBR2030CTLG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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