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LV56351JA

Onsemi

LV56351JA by Onsemi

LV56351JA by Onsemi is a 20-terminal switching regulator with BICMOS technology. It operates b/w -30 °C to 85°C, suitable for boost configurations with input voltage range of 8-23V. The small outline package makes it ideal for compact applications like power management systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 762 parts In-Stock

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Vyrian

USA . 500 parts In-Stock

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Kulean Microsystems

USA . 5,748 parts In-Stock

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SupplyDigital Components

Austria . 5,315 parts In-Stock

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TANS Electronics

Latvia . 3,876 parts In-Stock

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Corphita

USA . 2,007 parts In-Stock

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Problanco Electronics

Mexico . 1,198 parts In-Stock

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Corohmni

South Africa . 416 parts In-Stock

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UHIMA Technologies

Türkiye . 64 parts In-Stock

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Overview

Experience the power of innovation with the LV56351JA by Onsemi, a top-quality switching regulator & controller designed to exceed industry standards. With a commitment to excellence from Onsemi, this product offers unparalleled reliability and efficiency in various applications. From automotive to industrial settings, this small outline device delivers optimal performance and precision. Say goodbye to compromises and hello to unmatched value with the LV56351JA - the perfect choice for customers seeking top-tier performance and functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material ensures durability and reliability in various operating conditions.

Surface Mount: YES

Surface mount capability allows for easy installation and space-saving on PCB.

Package Shape: RECTANGULAR

Rectangular shape enables efficient use of board space and easy integration into existing designs.

No. of Terminals: 20

Having 20 terminals provides flexibility in connecting to other components and peripherals.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this product can perform reliably in demanding industrial environments.

Minimum Operating Temperature: -30 °C

The wide temperature range allows for operation in both extreme cold and hot conditions.

Width (mm): 4.4 mm

Compact width makes it suitable for applications where space is limited.

Nominal Input Voltage: 12 V

Nominal input voltage of 12V offers compatibility with standard power sources.

Technology: BICMOS

Utilizing BiCMOS technology ensures high efficiency and performance in the switching regulator.

Control Technique: PULSE WIDTH MODULATION

PWM control technique allows for precise regulation of output voltage for optimal performance.

Switcher Config: BOOST

Boost configuration is ideal for stepping up voltage levels, making it suitable for various power supply applications.

Minimum Input Voltage: 8 V

Low minimum input voltage ensures compatibility with a wide range of power sources.

Maximum Input Voltage: 23 V

High maximum input voltage capability provides flexibility for usage with different power sources.

Technical Specifications

Switching Regulators & Controllers LV56351JA attributes and parameters. Explore more Switching Regulators & Controllers devices from Onsemi

Specs

Additional Features:

ALSO OPERATES AS LDO REGULATOR

Other IC type:

Control Technique:

PULSE WIDTH MODULATION

Maximum Input Voltage:

23 V

Minimum Input Voltage:

8 V

Nominal Input Voltage:

12 V

JESD-30 Code:

R-PDSO-G20

Length:

6.5 mm

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Maximum Seated Height:

1.5 mm

Surface Mount:

YES

Switcher Config:

BOOST

Technology:

BICMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width (mm):

4.4 mm

Trade Compliance

LV56351JA Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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