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LV56351HA

Onsemi

LV56351HA by Onsemi

LV56351HA by Onsemi is a 14-terminal switching regulator with BICMOS technology. It operates b/w -30 °C to 85°C, suitable for boost configuration at input voltages ranging from 8V to 23V. With pulse width modulation control technique, it is ideal for compact applications requiring small outline and low profile packaging.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 831 parts In-Stock

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Digiode

USA . 598 parts In-Stock

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TANS Electronics

Latvia . 8,347 parts In-Stock

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Kulean Microsystems

USA . 3,647 parts In-Stock

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SupplyDigital Components

Austria . 3,472 parts In-Stock

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Corphita

USA . 2,287 parts In-Stock

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Problanco Electronics

Mexico . 1,864 parts In-Stock

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UHIMA Technologies

Türkiye . 827 parts In-Stock

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Corohmni

South Africa . 412 parts In-Stock

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Overview

The LV56351HA by Onsemi is a top-of-the-line switching regulator and controller that stands out for its superior quality and reliable performance. Manufactured by Onsemi, a trusted name in the industry, this product offers customers a wide range of applications in various industries. From its small outline and low profile package to its pulse width modulation control technique, this product delivers exceptional value and benefits to users. With a nominal input voltage of 12V and a boost switcher configuration, the LV56351HA is a must-have for anyone looking for high-quality power management solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material ensures a lightweight and durable package for the regulator, making it easy to handle and resistant to damage.

Surface Mount: YES

Surface mount capability allows for easy and efficient assembly onto circuit boards, saving time and making it suitable for automated production processes.

Package Shape: RECTANGULAR

Rectangular shape provides a compact form factor, allowing for efficient use of space on the circuit board.

No. of Terminals: 14

Having 14 terminals enables the regulator to interface with a variety of external components, increasing its versatility and functionality.

Package Style: SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

The small outline, low profile, and shrink pitch design enhances the overall space efficiency of the package, making it ideal for applications where size is a constraint.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85 °C, the regulator can withstand elevated temperatures, ensuring reliable performance in various operating conditions.

Minimum Operating Temperature: -30 °C

The low minimum operating temperature of -30 °C allows the regulator to function effectively in cold environments, making it suitable for a wide range of applications.

Terminal Position: DUAL

Dual terminal positions provide flexibility in connecting external components, allowing for versatile integration within a circuit design.

Maximum Seated Height: 1.5 mm

The low maximum seated height of 1.5 mm contributes to a slim profile, making it suitable for applications where space constraints are a priority.

Width (mm): 4.4 mm

The narrow width of 4.4 mm enables the regulator to fit within tight spaces on a circuit board, promoting efficient use of available area.

Other IC type: SWITCHING REGULATOR

Being a switching regulator, this product offers high efficiency and voltage regulation capabilities, making it an energy-efficient choice for power management applications.

Nominal Input Voltage: 12 V

With a nominal input voltage of 12 V, this regulator is suitable for applications that require stable and regulated power supply within this voltage range.

Length: 6.5 mm

The compact length of 6.5 mm allows for a space-saving design, making it suitable for applications where size constraints are a consideration.

Technology: BICMOS

Utilizing BiCMOS technology combines the benefits of bipolar and CMOS technologies, offering high speed, low power consumption, and robust performance for the regulator.

Terminal Form: GULL WING

The gull wing terminal form provides secure and reliable connections during assembly, ensuring proper functioning and longevity of the regulator.

Control Technique: PULSE WIDTH MODULATION

Pulse width modulation control technique allows for precise regulation of output voltage, offering efficient power conversion and optimized performance.

Switcher Config: BOOST

With a boost switcher configuration, this regulator can step up input voltage to a higher output voltage level, making it suitable for applications requiring voltage conversion.

Terminal Pitch: 0.65 mm

The small terminal pitch of 0.65 mm enables high-density mounting on a circuit board, maximizing space utilization and simplifying connectivity with other components.

Minimum Input Voltage: 8 V

The minimum input voltage of 8 V ensures that the regulator can operate effectively within a specified voltage range, offering versatility in power supply requirements.

Maximum Input Voltage: 23 V

With a maximum input voltage of 23 V, this regulator can handle higher voltage levels, making it suitable for applications requiring voltage regulation within this range.

Technical Specifications

Switching Regulators & Controllers LV56351HA attributes and parameters. Explore more Switching Regulators & Controllers devices from Onsemi

Specs

Additional Features:

ALSO OPERATES AS LDO REGULATOR

Other IC type:

Control Technique:

PULSE WIDTH MODULATION

Maximum Input Voltage:

23 V

Minimum Input Voltage:

8 V

Nominal Input Voltage:

12 V

JESD-30 Code:

R-PDSO-G14

Length:

6.5 mm

No. of Functions:

1

No. of Terminals:

14

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Maximum Seated Height:

1.5 mm

Surface Mount:

YES

Switcher Config:

BOOST

Technology:

BICMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width (mm):

4.4 mm

Trade Compliance

LV56351HA Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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