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LA74309FA

Onsemi

LA74309FA by Onsemi

LA74309FA by Onsemi is an audio amplifier IC with 10 terminals, offering a gain of 20 dB. It operates b/w -20 °C to 85°C and requires a supply voltage of 3.1V to 3.6V. This small outline package is ideal for audio and video amplification applications in compact electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,382 parts In-Stock

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Vyrian

USA . 419 parts In-Stock

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419

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SupplyDigital Components

Austria . 7,570 parts In-Stock

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Kulean Microsystems

USA . 7,048 parts In-Stock

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TANS Electronics

Latvia . 6,473 parts In-Stock

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Problanco Electronics

Mexico . 2,932 parts In-Stock

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Corphita

USA . 2,477 parts In-Stock

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Corohmni

South Africa . 277 parts In-Stock

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UHIMA Technologies

Türkiye . 192 parts In-Stock

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Overview

Upgrade your audio and video experience with the LA74309FA by Onsemi. Crafted with precision and expertise, this high-quality audio amplifier offers crystal-clear sound and exceptional performance. Perfect for a range of applications, from home entertainment systems to automotive audio, this compact and versatile device delivers unmatched value and benefits to customers. Elevate your audio experience with the LA74309FA and enjoy top-notch quality that only Onsemi can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lightweight and durable material for easy handling and long-lasting performance.

Surface Mount: YES

Allows for easy installation on circuit boards.

No. of Terminals: 10

Provides flexibility for connecting various components.

Maximum Operating Temperature: 85 °C

Ensures stable performance even under high temperature conditions.

Minimum Operating Temperature: -20 °C

Can withstand low temperature environments without compromising functionality.

Width: 3 mm

Compact size for space-saving installation.

Minimum Supply Voltage (Vsup): 3.1 V

Operates efficiently with low voltage supply, saving energy.

Terminal Form: GULL WING

Secure connection and easy soldering on the circuit board.

Gain: 20 dB

Provides amplification for clear and powerful audio output.

Maximum Supply Voltage (Vsup): 3.6 V

Safely operates within the specified voltage range for optimal performance.

Technical Specifications

Audio & Video Amplifiers LA74309FA attributes and parameters. Explore more Audio & Video Amplifiers devices from Onsemi

Specs

Additional Features:

SEATED HGT-NOM

General IC Type:

Gain:

20 dB

JESD-30 Code:

S-PDSO-G10

Length:

3 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

10

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Maximum Seated Height:

1.03 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3.1 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

3 mm

Trade Compliance

LA74309FA General Purpose ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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