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LA74309TT

Onsemi

LA74309TT by Onsemi

LA74309TT by Onsemi is an audio preamplifier IC with 10 terminals and a power supply of 3.3V. It operates b/w -20 °C to 85°C, drawing a max current of 6.7mA. Ideal for audio and video amplification applications due to its small outline package and bipolar technology.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,051 parts In-Stock

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Vyrian

USA . 108 parts In-Stock

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108

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Problanco Electronics

Mexico . 7,291 parts In-Stock

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7,291

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TANS Electronics

Latvia . 5,819 parts In-Stock

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SupplyDigital Components

Austria . 2,120 parts In-Stock

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Kulean Microsystems

USA . 1,377 parts In-Stock

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UHIMA Technologies

Türkiye . 379 parts In-Stock

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379

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Corohmni

South Africa . 327 parts In-Stock

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Corphita

USA . 168 parts In-Stock

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Overview

Elevate your audio experience with the LA74309TT by Onsemi, a premium quality audio preamplifier designed to deliver unparalleled sound performance. Manufactured by Onsemi, a trusted name in the industry known for their cutting-edge technology and innovative solutions, this amplifier is perfect for a wide range of applications in the audio and video industry. With its compact design and superior functionality, the LA74309TT offers customers exceptional value, benefits, and advantages, making it the ideal choice for all your audio amplification needs. Take your audio quality to the next level with the LA74309TT by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the product durable and lightweight, ideal for portable audio amplifiers.

Surface Mount: YES

Surface mount design allows for easy and compact installation in various electronic devices.

Package Shape: RECTANGULAR

Rectangular shape helps in efficient utilization of space and easy integration into the device's design.

General IC Type: AUDIO PREAMPLIFIER

Audio preamplifier type ensures high-quality sound amplification, perfect for audio applications.

Power Supplies (V): 3.3

Operates on a 3.3V power supply, making it suitable for low-power audio amplification applications.

No. of Terminals: 10

Having 10 terminals allows for versatile connectivity options for different audio input and output configurations.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Compact package style with thin profile and shrink pitch enhances the product's portability and space-saving capabilities.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures reliable performance even under demanding conditions.

Minimum Operating Temperature: -20 °C

Low minimum operating temperature ensures the amplifier can function effectively in a wide range of environments.

Technology: BIPOLAR

Bipolar technology offers high-quality audio amplification with low distortion, suitable for professional audio setups.

Terminal Form: GULL WING

Gull wing terminal form provides secure and reliable electrical connections, minimizing signal loss and interference.

Maximum Supply Current: 6.7 mA

Low maximum supply current consumption ensures energy efficiency and prolonged battery life in portable devices.

Terminal Pitch: 0.5 mm

Fine terminal pitch allows for precise component placement on the circuit board, enabling efficient assembly and high-density designs.

Technical Specifications

Audio & Video Amplifiers LA74309TT attributes and parameters. Explore more Audio & Video Amplifiers devices from Onsemi

Specs

General IC Type:

JESD-30 Code:

R-PDSO-G10

No. of Functions:

1

No. of Terminals:

10

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP10,.19,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Power Supplies (V):

3.3

Qualification:

Not Qualified

Sub-Category:

Audio/Video Amplifiers

Maximum Supply Current:

6.7 mA

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Trade Compliance

LA74309TT General Purpose ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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