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JAN2N6438

Onsemi

JAN2N6438 by Onsemi

JAN2N6438 by Onsemi is a PNP transistor with max power dissipation of 200W, hFE of 30, and IC of 25A. Ideal for applications requiring high current amplification in circuits operating up to 200 °C.

Median Price

$248.120

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

JAN2N6438 by Onsemi
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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 1 parts In-Stock

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Vyrian

USA . 1,892 parts In-Stock

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Digiode

USA . 1,402 parts In-Stock

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Corohmni

South Africa . 410 parts In-Stock

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410

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Problanco Electronics

Mexico . 4,025 parts In-Stock

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4,025

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Kulean Microsystems

USA . 4,014 parts In-Stock

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4,014

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RGB Technical Solutions

Ukraine . 3,525 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 3,403 parts In-Stock

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SupplyDigital Components

Austria . 3,049 parts In-Stock

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Corphita

USA . 2,286 parts In-Stock

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TANS Electronics

Latvia . 810 parts In-Stock

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UHIMA Technologies

Türkiye . 130 parts In-Stock

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Overview

Unlock the power of precision and reliability with the JAN2N6438 by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and performance in every product they produce. The JAN2N6438 PNP transistor is perfect for a wide range of applications, providing a seamless and efficient solution for your electronic needs. With a maximum power dissipation of 200W and a high DC current gain, this transistor offers unparalleled value and benefits to customers looking for a dependable and versatile component. Trust Onsemi to deliver excellence with the JAN2N6438.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits and can be easily integrated into existing PNP transistor circuits, making this product versatile.

Configuration: SINGLE

The single configuration simplifies the design and implementation of the transistor into circuits, making it easier to use and troubleshoot.

Maximum Power Dissipation (Abs): 200 W

With a high maximum power dissipation, this transistor can handle large amounts of power without overheating, ensuring reliability in high-power applications.

Minimum DC Current Gain (hFE): 30

A higher DC current gain allows for smaller base currents to control larger collector currents, providing efficiency and accuracy in signal amplification.

Maximum Operating Temperature: 200 °C

The high maximum operating temperature allows this transistor to withstand elevated temperatures, making it suitable for applications where heat dissipation is a concern.

Maximum Collector Current (IC): 25 A

The high maximum collector current enables this transistor to handle large current flows, ideal for applications requiring high power output.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish offers good solderability and conductivity, ensuring secure connections in circuit assemblies.

Nominal Transition Frequency (fT): 40 MHz

With a high nominal transition frequency, this transistor can efficiently switch between on and off states at high speeds, making it suitable for radio frequency applications.

Technical Specifications

Other Function Transistors JAN2N6438 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-609 Code:

e0

No. of Elements:

1

Maximum Operating Temperature:

200 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Nominal Transition Frequency (fT):

Trade Compliance

JAN2N6438 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-216-7262, 5961012167262, 5961-01-330-7297, 5961013307297

NIIN

012167262, 013307297

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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