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JAN2N6058

Onsemi

JAN2N6058 by Onsemi

JAN2N6058 by Onsemi is an NPN Darlington transistor with 150W power dissipation, 750 min hFE, and 12A collector current. Ideal for high-power applications requiring a reliable switching device with a max operating temperature of 200 °C.

Median Price

$51.170

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

JAN2N6058 by Onsemi
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Microchip Technology

USA . 120 parts In-Stock

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$51.170

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Freelance Electronics

USA . 5 parts In-Stock

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$47.309

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$49.675

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$46.836

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Digiode

USA . 1,519 parts In-Stock

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$48.612

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American Microsemiconductor Inc.

USA . 9 parts In-Stock

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$108.570

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Vyrian

USA . 3,695 parts In-Stock

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Electronic Expediters

USA . 57 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 4 parts In-Stock

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Sunrise Surplus Inc.

USA . 4 parts In-Stock

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Corphita

USA . 1,627 parts In-Stock

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$46.053

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Corohmni

South Africa . 295 parts In-Stock

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$47.309

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QUARKTWIN TECHNOLOGY LTD

USA . 29,561 parts In-Stock

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LMD Electronica

Estonia . 8,249 parts In-Stock

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Problanco Electronics

Mexico . 8,193 parts In-Stock

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Microchip USA

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NIA Electronics

USA . 6,886 parts In-Stock

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Ledger Components

France . 6,886 parts In-Stock

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LOOK Integrated Logistics

Peru . 4,788 parts In-Stock

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SupplyDigital Components

Austria . 3,538 parts In-Stock

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Kulean Microsystems

USA . 401 parts In-Stock

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Montano Global Distributors

Canada . 90 parts In-Stock

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UHIMA Technologies

Türkiye . 34 parts In-Stock

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TANS Electronics

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A-Plus Industry Inc.

USA . 1 parts In-Stock

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Overview

Experience the superior quality and reliability of Onsemi with the JAN2N6058 NPN Darlington transistor. Ideal for a wide range of applications, this high-performance transistor offers a maximum power dissipation of 150W and a minimum DC current gain of 750, ensuring exceptional performance in various circuits. With a maximum collector current of 12A and nominal transition frequency of 4MHz, this transistor is a versatile choice for amplifiers, switches, and motor control applications. Trust Onsemi to deliver innovative solutions that exceed your expectations. Elevate your designs with the JAN2N6058 transistor today.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, providing high voltage and current gain for various applications.

Configuration: DARLINGTON

Darlington configuration offers very high current gain and is suitable for applications requiring high level of amplification with minimal input current.

Maximum Power Dissipation (Abs): 150 W

High power dissipation capability allows the transistor to handle large amounts of power without overheating, making it suitable for demanding applications.

Minimum DC Current Gain (hFE): 750

A high DC current gain ensures better amplification and signal control, making the transistor efficient in various circuits.

Maximum Operating Temperature: 200 °C

With a high operating temperature limit, this transistor can withstand elevated temperatures without performance degradation, ensuring reliability under harsh conditions.

Maximum Collector Current (IC): 12 A

The high collector current rating allows the transistor to handle significant current loads, making it suitable for applications that require high current capability.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish provides good solderability and ensures reliable electrical connections, making the transistor easy to integrate into circuits.

Nominal Transition Frequency (fT): 4 MHz

A high transition frequency allows the transistor to operate at high frequencies, making it suitable for applications where high-speed switching or amplification is required.

Technical Specifications

Other Function Transistors JAN2N6058 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

750

JESD-609 Code:

e0

Maximum Operating Temperature:

200 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Nominal Transition Frequency (fT):

Trade Compliance

JAN2N6058 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-081-4205, 5961010814205

NIIN

010814205

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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