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FQB8P10TM

Onsemi

FQB8P10TM by Onsemi

FQB8P10TM by Onsemi is a P-CHANNEL power FET with a min DS breakdown voltage of 100V. It has a max pulsed drain current of 32A and an avalanche energy rating of 150mJ. This transistor is commonly used for switching applications.

Median Price

$1.262

Lifecycle Status

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7

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1k+

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Farnell

UK . 5 parts In-Stock

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$1.050

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Element14

Singapore . 6 parts In-Stock

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$1.473

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$1.414

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$1.355

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$1.355

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Freelance Electronics

USA . 8 parts In-Stock

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$0.406

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Nova Conductors

Japan . 300 parts In-Stock

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Digiode

USA . 1,267 parts In-Stock

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Vyrian

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Corohmni

South Africa . 259 parts In-Stock

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$0.406

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$0.406

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Continental Prestige Electronics

USA . 1,219 parts In-Stock

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$0.421

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Argo Parts USA

USA . 1,871 parts In-Stock

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$0.679

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$0.659

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$0.679

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$0.659

Netroflash

USA . 50 parts In-Stock

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$0.679

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$0.679

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Semicontronic

India . 6 parts In-Stock

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$0.890

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$0.868

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$0.863

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6

$0.890

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Ampacity Inc.

Singapore . 6 parts In-Stock

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$0.960

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$0.960

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Corphita

USA . 1,224 parts In-Stock

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$1.017

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Aztec Data Supply Inc.

USA . 3,184 parts In-Stock

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$1.817

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AZTECH Wire

Italy . 872 parts In-Stock

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$9.488

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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GreenTree Electronics

Israel . 35,200 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Lixinc

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SupplyDigital Components

Austria . 8,138 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,317 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,878 parts In-Stock

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Kepictronics

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Perfect Parts

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Supply Digital

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Kulean Microsystems

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RC Electronics

USA . 1,500 parts In-Stock

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$0.710

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$0.670

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$0.660

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TANS Electronics

Latvia . 1,084 parts In-Stock

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UHIMA Technologies

Türkiye . 983 parts In-Stock

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Authorized Procurement Solutions

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Problanco Electronics

Mexico . 376 parts In-Stock

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Overview

Elevate your power switching capabilities with the FQB8P10TM by Onsemi. This P-Channel Power Field Effect Transistor (FET) offers unmatched quality and reliability, thanks to Onsemi's reputation for excellence in semiconductor manufacturing. Ideal for a variety of switching applications, this product provides customers with enhanced efficiency, performance, and durability. Experience seamless operation and superior results with the FQB8P10TM - the perfect solution for your power management needs.

Feature Benefit Bullets

P-CHANNEL Power Field Effect Transistor

Provides efficient and reliable power switching capabilities for various applications.

SINGLE Configuration with Built-In Diode

Simplifies circuit design by integrating a diode, offering enhanced convenience and space-saving.

ENHANCEMENT MODE Operating Mode

Ensures excellent performance and control in switching operations.

Rectangular PLASTIC/EPOXY Package Body

Provides durability and protection, ensuring long-lasting performance in various operating conditions.

Surface Mount Compatible

Enables easy and secure installation on circuit boards, enhancing convenience and reliability.

High DS Breakdown Voltage of 100 V

Safeguards against voltage fluctuations, enhancing the product's reliability and protecting connected devices.

GULL WING Terminal Form

Facilitates seamless soldering and connection, improving overall reliability.

Maximum Drain Current of 8 A

Enables the transmission of higher current loads, enhancing the product's efficiency and capability.

SMALL OUTLINE Package Style

Enables compact integration within electronic devices, optimizing space utilization.

METAL-OXIDE SEMICONDUCTOR Field Effect Transistor Technology

Ensures superior performance and efficiency in power switching applications.

Maximum Operating Temperature of 175 °C

Enables reliable operation even in high-temperature environments, expanding the product's versatility.

Silicon Transistor Element Material

Provides stability and longevity, ensuring consistent performance over time.

Moisture Sensitivity Level 1

Ensures resistance to moisture, enhancing the product's durability and reliability.

DRAIN Case Connection

Offers efficient heat dissipation, preventing overheating and extending the product's lifespan.

Only 30 s Maximum Time At Peak Reflow Temperature

Streamlines manufacturing processes, reducing production time and costs.

Matte Tin Terminal Finish

Provides corrosion resistance, ensuring a reliable connection and maintaining performance over time.

Maximum Drain-Source On Resistance of 0.53 ohm

Minimizes power losses and improves efficiency, maximizing the product's performance.

Technical Specifications

Power Field Effect Transistors (FET) FQB8P10TM attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

150 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

8 A

Maximum Drain Current (ID):

8 A

Maximum Drain-Source On Resistance:

.53 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

32 A

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FQB8P10TM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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