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FODM8071R2V

Onsemi

FODM8071R2V by Onsemi

FODM8071R2V by Onsemi is a single optocoupler with a max forward current of 0.02A and an isolation voltage of 3750V. It operates b/w -40 °C to 110°C, making it suitable for logic IC output applications at data rates up to 20MBps. This surface mount device has a max on-state current of 0.01A, ideal for high-speed communication systems.

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Native Components

USA . 948 parts In-Stock

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Northwest PG Solutions

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SupplyDigital Components

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TANS Electronics

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Kulean Microsystems

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Corphita

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Problanco Electronics

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Overview

Experience unmatched quality and reliability with the FODM8071R2V optocoupler circuit output by Onsemi. Designed to meet the highest industry standards, this single configuration device offers a wide range of applications in logic IC output optocoupling. With a maximum isolation voltage of 3750V and a nominal data rate of 20 MBps, this product ensures optimal performance even in extreme operating conditions. Trust Onsemi's expertise in optoelectronics to deliver exceptional value and benefits to your projects, making the FODM8071R2V the ideal choice for your next application.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration provides simplicity and ease of use in applications requiring only one optocoupler circuit output.

Maximum Forward Current: 0.02 A

High maximum forward current allows for reliable operation and handling of higher current loads.

Optoelectronic Type: LOGIC IC OUTPUT OPTOCOUPLER

Logic IC output optocoupler ensures compatibility with logic level signals and enhances signal integrity.

Minimum Supply Voltage: 3 V

Low minimum supply voltage enables the product to operate in low-voltage circuits efficiently.

Maximum Operating Temperature: 110 °C

Wide maximum operating temperature range ensures the product can withstand high temperature environments.

Minimum Operating Temperature: -40 °C

Wide minimum operating temperature range allows the product to operate in extreme cold conditions.

Packing Method: TR

TR packing method offers easy handling and storage of the product in reel format.

Maximum Isolation Voltage: 3750 V

High isolation voltage provides safety and protection for sensitive components in the circuit.

Nominal Data Rate: 20 MBps

High data rate enables fast and accurate transmission of signals between connected devices.

Mounting Feature: SURFACE MOUNT

Surface mounting feature ensures easy and secure installation of the product on circuit boards.

Maximum On State Current: 0.01 A

Low maximum on-state current helps in reducing power consumption and heat dissipation.

Technical Specifications

Optocoupler Circuit Outputs FODM8071R2V attributes and parameters. Explore more Optocoupler Circuit Outputs devices from Onsemi

Specs

Additional Features:

CMOS COMPATIBLE, IEC-60747-5-5, UL APPROVED

Configuration:

SINGLE

Nominal Data Rate:

20 MBps

Maximum Forward Current:

.02 A

Maximum Isolation Voltage:

3750 V

Mounting Feature:

No. of Elements:

1

No. of Functions:

1

Maximum On State Current:

.01 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

TR

Minimum Supply Voltage:

3 V

Trade Compliance

FODM8071R2V Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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