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FODM3083R2V

Onsemi

FODM3083R2V by Onsemi

FODM3083R2V by Onsemi is a single TRIAC output optocoupler with a max forward current of 0.06A and isolation voltage of 3750V. It operates b/w -40 to 100 °C, suitable for triggering devices in various applications like industrial control systems and power supplies.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

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Digiode

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Native Components

USA . 517 parts In-Stock

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Northwest PG Solutions

USA . 640 parts In-Stock

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Kulean Microsystems

USA . 7,289 parts In-Stock

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TANS Electronics

Latvia . 5,230 parts In-Stock

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Problanco Electronics

Mexico . 4,381 parts In-Stock

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SupplyDigital Components

Austria . 3,779 parts In-Stock

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Supply Digital

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Corphita

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UHIMA Technologies

Türkiye . 47 parts In-Stock

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Overview

Experience the unparalleled quality and reliability of Onsemi's FODM3083R2V Optocoupler Trigger Device Outputs. This innovative product offers a wide range of applications, providing customers with enhanced safety and efficiency. With a maximum isolation voltage of 3750V and a maximum forward current of 0.06A, this optocoupler ensures optimal performance even in extreme conditions. Trust Onsemi for cutting-edge technology that delivers unmatched value and benefits to meet all your needs. Elevate your projects with the FODM3083R2V and experience the difference today.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration makes it easy to set up and control, perfect for simple applications.

Maximum Forward Current: 0.06 A

High maximum forward current allows for reliable operation with various loads.

Optoelectronic Type: TRIAC OUTPUT OPTOCOUPLER

Triac output optocoupler offers efficient and fast switching capabilities.

Maximum Operating Temperature: 100 °C

Wide operating temperature range ensures reliability in different environmental conditions.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for use in cold environments.

Maximum Input Trigger Current: 0.005 A

Low trigger current requirement saves energy and makes it compatible with various control circuits.

Repetitive Off-state Voltage (Peak): 800 V

High off-state voltage allows for safe and reliable isolation of circuits.

Packing Method: TR

TR packing method ensures easy handling and installation of the optocoupler.

Maximum Reverse Leakage Current: 0.0001 A

Very low reverse leakage current helps in maintaining signal integrity.

Minimum Peak Off-state Voltage: 800 V

High off-state voltage ensures reliable isolation of circuits in off-state.

Maximum Isolation Voltage: 3750 V

High isolation voltage provides safety and protection for sensitive components.

Mounting Feature: SURFACE MOUNT

Surface mount feature allows for easy and secure installation on circuit boards.

Maximum On State Current: 0.07 A

High maximum on-state current enables efficient operation with various loads.

Technical Specifications

Optocoupler Trigger Device Outputs FODM3083R2V attributes and parameters. Explore more Optocoupler Trigger Device Outputs devices from Onsemi

Specs

Additional Features:

UL APPROVED, VDE APPROVED

Configuration:

SINGLE

Maximum Forward Current:

.06 A

Maximum Input Trigger Current:

.005 A

Maximum Isolation Voltage:

3750 V

Mounting Feature:

No. of Elements:

1

Maximum On State Current:

.07 A

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

TR

Minimum Peak Off-state Voltage:

800 V

Repetitive Off-state Voltage (Peak):

800 V

Maximum Reverse Leakage Current:

.0001 A

Trade Compliance

FODM3083R2V Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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