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FODM3082R2V

Onsemi

FODM3082R2V by Onsemi

FODM3082R2V by Onsemi is a TRIAC OUTPUT OPTOCOUPLER with 3V Max On State Voltage, 0.06A Max Forward Current, and 800V Repetitive Off-state Voltage. It is ideal for applications requiring optocoupler trigger device outputs in a temperature range of -40 to 100 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,364 parts In-Stock

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Vyrian

USA . 1,585 parts In-Stock

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1,585

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Native Components

USA . 969 parts In-Stock

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$1.220

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969

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Northwest PG Solutions

USA . 337 parts In-Stock

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$1.342

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SupplyDigital Components

Austria . 7,980 parts In-Stock

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TANS Electronics

Latvia . 7,969 parts In-Stock

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Problanco Electronics

Mexico . 7,812 parts In-Stock

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Kulean Microsystems

USA . 4,725 parts In-Stock

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Corphita

USA . 1,398 parts In-Stock

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Supply Digital

USA . 1,036 parts In-Stock

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Corohmni

South Africa . 208 parts In-Stock

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UHIMA Technologies

Türkiye . 189 parts In-Stock

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Overview

Enhance your electronic designs with the FODM3082R2V by Onsemi, a top-quality optocoupler trigger device output that guarantees superior performance and reliability. Manufactured by Onsemi, a trusted leader in the industry, this product offers a wide range of applications in various electronic systems. With its single configuration and triac output optocoupler technology, this device ensures seamless operation and precise control. Experience the value and benefits of this product with its high isolation voltage, low reverse leakage current, and efficient mounting feature. Upgrade your projects with the FODM3082R2V and enjoy unparalleled advantages in your electronic applications.

Feature Benefit Bullets

Maximum On State Voltage: 3 V

Low voltage operation saves energy and reduces heat generation, making the product more efficient.

Configuration: SINGLE

Simplified design with a single configuration makes it easy to integrate into various systems.

Maximum Forward Current: 0.06 A

Able to handle moderate current levels, suitable for a wide range of applications.

Optoelectronic Type: TRIAC OUTPUT OPTOCOUPLER

Triac output ensures fast switching and robust performance.

Maximum Operating Temperature: 100 °C

High operating temperature range allows for use in challenging environments without any issues.

Minimum Operating Temperature: -40 °C

Wide temperature range ensures functionality even in extreme cold conditions.

Maximum Input Trigger Current: 0.01 A

Low current trigger requirement for operation, increasing safety and reducing power consumption.

Repetitive Off-state Voltage (Peak): 800 V

High off-state voltage ensures reliable performance and protection against voltage spikes.

Packing Method: TR

TR packing method provides convenience in handling and installation.

Maximum Reverse Leakage Current: 0.0001 A

Ultra-low reverse leakage current minimizes power loss and enhances efficiency.

Minimum Peak Off-state Voltage: 800 V

High off-state voltage rating ensures robust insulation and protection against voltage surges.

Maximum Isolation Voltage: 3750 V

High isolation voltage rating ensures safety and reliability in high-voltage applications.

Mounting Feature: SURFACE MOUNT

Surface mount design allows for easy and compact integration on PCBs, saving space and simplifying assembly.

Maximum On State Current: 0.07 A

Higher on state current capability allows for handling peak loads and ensures stable operation.

Technical Specifications

Optocoupler Trigger Device Outputs FODM3082R2V attributes and parameters. Explore more Optocoupler Trigger Device Outputs devices from Onsemi

Specs

Additional Features:

UL APPROVED, VDE APPROVED

Configuration:

SINGLE

Maximum Forward Current:

.06 A

Maximum Input Trigger Current:

.01 A

Maximum Isolation Voltage:

3750 V

Mounting Feature:

No. of Elements:

1

Maximum On State Current:

.07 A

Maximum On State Voltage:

3 V

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

TR

Minimum Peak Off-state Voltage:

800 V

Repetitive Off-state Voltage (Peak):

800 V

Maximum Reverse Leakage Current:

.0001 A

Trade Compliance

FODM3082R2V Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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