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FDS2734

Onsemi

FDS2734 by Onsemi

FDS2734 by Onsemi is a N-CHANNEL Power FET with 250V DS Breakdown Voltage and 3A Max ID. It features a built-in diode, 50A IDM, and operates in Enhancement Mode. Ideal for applications requiring high power dissipation in small outline packages.

Median Price

$2.081

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 2,500 parts In-Stock

1+ parts

$2.800

100+ parts

$1.230

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-

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2,500

$2.800

$1.230

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Mouser Electronics

USA . 5,903 parts In-Stock

1+ parts

$3.010

100+ parts

$1.410

1k+ parts

$1.050

10k+ parts

$0.972

5,903

$3.010

$1.410

$1.050

$0.972

Newark

USA . 500 parts In-Stock

1+ parts

$3.220

100+ parts

$1.640

1k+ parts

$1.340

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-

500

$3.220

$1.640

$1.340

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Arrow

USA . 2,500 parts In-Stock

1+ parts

-

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$0.833

2,500

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$0.833

Verical

USA . 2,500 parts In-Stock

1+ parts

-

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$0.831

2,500

-

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$0.831

Element14

Singapore . 1,603 parts In-Stock

1+ parts

-

100+ parts

$1.362

1k+ parts

$1.016

10k+ parts

$0.957

1,603

-

$1.362

$1.016

$0.957

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Greenchips

USA . 24,500 parts In-Stock

1+ parts

$0.918

100+ parts

$0.874

1k+ parts

$0.833

10k+ parts

$0.751

24,500

$0.918

$0.874

$0.833

$0.751

Digiode

USA . 855 parts In-Stock

1+ parts

$1.900

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-

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855

$1.900

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Nova Conductors

Japan . 55 parts In-Stock

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$2.176

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55

$2.176

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TME

Poland . 1,998 parts In-Stock

1+ parts

$2.850

100+ parts

$1.290

1k+ parts

$1.110

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1,998

$2.850

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$1.110

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Chip Stock

USA . 14,400 parts In-Stock

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Flip Electronics

USA . 7,085 parts In-Stock

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Vyrian

USA . 4,014 parts In-Stock

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4,014

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Inventory MP

USA . 1,982 parts In-Stock

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1,982

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Bristol Electronics

USA . 1,982 parts In-Stock

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1,982

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Prism Electronics

USA . 96 parts In-Stock

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96

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Velocity Electronics

USA . 12 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 1,585 parts In-Stock

1+ parts

$0.515

100+ parts

-

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10k+ parts

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1,585

$0.515

-

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Semicontronic

India . 4,045 parts In-Stock

1+ parts

$0.730

100+ parts

$0.712

1k+ parts

$0.708

10k+ parts

-

4,045

$0.730

$0.712

$0.708

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Ampacity Inc.

Singapore . 3,923 parts In-Stock

1+ parts

$0.730

100+ parts

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3,923

$0.730

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Corohmni

South Africa . 72 parts In-Stock

1+ parts

$0.802

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72

$0.802

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Continental Prestige Electronics

USA . 1,434 parts In-Stock

1+ parts

$1.036

100+ parts

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$1.015

1,434

$1.036

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-

$1.015

Argo Parts USA

USA . 318 parts In-Stock

1+ parts

$1.036

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318

$1.036

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Advanced Electronics

New Zealand . 70 parts In-Stock

1+ parts

$1.072

100+ parts

$1.072

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$1.072

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70

$1.072

$1.072

$1.072

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Corphita

USA . 2,344 parts In-Stock

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$1.800

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2,344

$1.800

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$2.176

100+ parts

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1k+ parts

$2.067

10k+ parts

$2.023

2,000

$2.176

-

$2.067

$2.023

Microchip USA

USA . 2,002 parts In-Stock

1+ parts

$6.242

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2,002

$6.242

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Perfect Parts

USA . 38,398 parts In-Stock

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38,398

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RC Electronics

USA . 27,321 parts In-Stock

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$1.090

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$1.000

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$0.970

27,321

-

$1.090

$1.000

$0.970

TANS Electronics

Latvia . 7,726 parts In-Stock

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7,726

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GlobX GmbH

Germany . 4,800 parts In-Stock

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4,800

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Kulean Microsystems

USA . 4,609 parts In-Stock

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4,609

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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3,900

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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S.R.D Solutions

India . 3,000 parts In-Stock

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Kepictronics

USA . 2,500 parts In-Stock

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Problanco Electronics

Mexico . 2,424 parts In-Stock

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2,424

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SupplyDigital Components

Austria . 1,115 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Supply Digital

USA . 507 parts In-Stock

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507

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UHIMA Technologies

Türkiye . 288 parts In-Stock

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Overview

Enhance your power management solutions with the FDS2734 from Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Field Effect Transistors (FET) like the FDS2734, designed with a single configuration and built-in diode for added convenience. Ideal for various applications, this N-channel transistor offers efficient performance and reliable functionality. Say goodbye to power management woes and embrace the value and benefits that the FDS2734 brings to your projects. Choose Onsemi for superior quality and unmatched reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body offers excellent durability and protection for the internal components of the FET, ensuring a long lifespan.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer lower resistance and higher current-carrying capabilities compared to P-channel FETs, making them suitable for high-performance applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode helps in preventing reverse voltage spikes, providing added protection to the circuit and enhancing the reliability of the FET.

Minimum DS Breakdown Voltage: 250 V

With a minimum breakdown voltage of 250V, this FET can handle high voltage applications with ease, making it suitable for a wide range of power-related tasks.

Surface Mount: YES

Being surface mountable, this FET is easy to install and offers space-saving benefits, making it ideal for compact electronic devices.

Maximum Pulsed Drain Current (IDM): 50 A

The high pulsed drain current rating of 50A allows this FET to handle sudden surges of power without getting damaged, making it reliable for demanding applications.

Maximum Power Dissipation (Abs): 2.5 W

With a maximum power dissipation of 2.5W, this FET can effectively dissipate heat generated during operation, preventing overheating and ensuring stable performance.

Maximum Operating Temperature: 150 °C

The FET can operate at a maximum temperature of 150°C, making it suitable for high-temperature environments and applications where thermal management is crucial.

Maximum Drain-Source On Resistance: 0.225 ohm

The low drain-source on resistance of 0.225 ohm ensures efficient power transfer and minimal power loss, enhancing the overall performance of the FET.

Technical Specifications

Power Field Effect Transistors (FET) FDS2734 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

12.5 mJ

Minimum DS Breakdown Voltage:

250 V

Maximum Drain Current (Abs) (ID):

3 A

Maximum Drain Current (ID):

3 A

Maximum Drain-Source On Resistance:

.225 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

50 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

FDS2734 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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