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FDC2612

Onsemi

FDC2612 by Onsemi

FDC2612 by Onsemi is a N-CHANNEL FET with 200V DS Breakdown Voltage and 1.1A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a RECTANGULAR package style. Operating in ENHANCEMENT MODE, this transistor has 0.8W Power Dissipation and operates up to 150°C.

Median Price

$0.376

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,223 parts In-Stock

1+ parts

$0.282

100+ parts

$0.265

1k+ parts

$0.240

10k+ parts

-

2,223

$0.282

$0.265

$0.240

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Arrow

USA . 2,000 parts In-Stock

1+ parts

$0.308

100+ parts

$0.244

1k+ parts

$0.183

10k+ parts

-

2,000

$0.308

$0.244

$0.183

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Newark

USA . 3,713 parts In-Stock

1+ parts

$1.170

100+ parts

$0.484

1k+ parts

$0.341

10k+ parts

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3,713

$1.170

$0.484

$0.341

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Mouser Electronics

USA . 9,228 parts In-Stock

1+ parts

$1.220

100+ parts

$0.503

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-

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9,228

$1.220

$0.503

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DigiKey

USA . 4,311 parts In-Stock

1+ parts

$1.220

100+ parts

$0.503

1k+ parts

$0.353

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4,311

$1.220

$0.503

$0.353

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Chip1Stop

Japan . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.376

1k+ parts

$0.364

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3,000

-

$0.376

$0.364

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Verical

USA . 3,000 parts In-Stock

1+ parts

-

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$0.247

3,000

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$0.247

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,252 parts In-Stock

1+ parts

$0.268

100+ parts

-

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2,252

$0.268

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Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$0.392

100+ parts

-

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150

$0.392

-

-

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TME

Poland . 1,024 parts In-Stock

1+ parts

$1.150

100+ parts

$0.483

1k+ parts

$0.347

10k+ parts

$0.331

1,024

$1.150

$0.483

$0.347

$0.331

Bristol Electronics

USA . 16 parts In-Stock

1+ parts

$1.500

100+ parts

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16

$1.500

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NAC Semi

USA . 79 parts In-Stock

1+ parts

$9.700

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79

$9.700

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Ozdisan Elektronik

Türkiye . 10 parts In-Stock

1+ parts

$61.611

100+ parts

-

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-

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10

$61.611

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Flip Electronics

USA . 36,000 parts In-Stock

1+ parts

-

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36,000

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Chip Stock

USA . 17,500 parts In-Stock

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17,500

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IBS Electronics

USA . 6,000 parts In-Stock

1+ parts

-

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$0.617

6,000

-

-

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$0.617

Vyrian

USA . 4,469 parts In-Stock

1+ parts

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4,469

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Cyclops Electronics Ltd

UK . 3,000 parts In-Stock

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3,000

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ACDS - Activité Composants Distribution Service

France . 120 parts In-Stock

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120

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Sensible Micro Corp

USA . 64 parts In-Stock

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64

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Prism Electronics

USA . 12 parts In-Stock

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12

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Dan-Mar Components

USA . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 4,513 parts In-Stock

1+ parts

$0.240

100+ parts

$0.234

1k+ parts

$0.233

10k+ parts

-

4,513

$0.240

$0.234

$0.233

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Ampacity Inc.

Singapore . 4,377 parts In-Stock

1+ parts

$0.240

100+ parts

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4,377

$0.240

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Corphita

USA . 2,249 parts In-Stock

1+ parts

$0.254

100+ parts

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2,249

$0.254

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Corohmni

South Africa . 93 parts In-Stock

1+ parts

$0.282

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93

$0.282

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Argo Parts USA

USA . 4,856 parts In-Stock

1+ parts

$0.392

100+ parts

-

1k+ parts

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10k+ parts

$0.380

4,856

$0.392

-

-

$0.380

Continental Prestige Electronics

USA . 2,444 parts In-Stock

1+ parts

$0.392

100+ parts

-

1k+ parts

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10k+ parts

$0.384

2,444

$0.392

-

-

$0.384

Netroflash

USA . 50 parts In-Stock

1+ parts

$0.392

100+ parts

-

1k+ parts

$0.372

10k+ parts

$0.365

50

$0.392

-

$0.372

$0.365

Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$0.455

100+ parts

$0.418

1k+ parts

$0.392

10k+ parts

-

50

$0.455

$0.418

$0.392

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Component Stockers USA

USA . 1,527 parts In-Stock

1+ parts

$0.720

100+ parts

$0.430

1k+ parts

$0.310

10k+ parts

-

1,527

$0.720

$0.430

$0.310

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Aztec Data Supply Inc.

USA . 1,809 parts In-Stock

1+ parts

$1.594

100+ parts

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1,809

$1.594

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RC Electronics

USA . 95,511 parts In-Stock

1+ parts

-

100+ parts

$0.400

1k+ parts

$0.360

10k+ parts

$0.350

95,511

-

$0.400

$0.360

$0.350

Perfect Parts

USA . 33,501 parts In-Stock

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33,501

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iodParts Technologies Inc.

India . 17,860 parts In-Stock

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17,860

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Lixinc

USA . 7,590 parts In-Stock

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7,590

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SupplyDigital Components

Austria . 7,460 parts In-Stock

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7,460

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Problanco Electronics

Mexico . 6,251 parts In-Stock

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6,251

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Kulean Microsystems

USA . 5,486 parts In-Stock

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5,486

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S.R.D Solutions

India . 5,000 parts In-Stock

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5,000

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TANS Electronics

Latvia . 3,209 parts In-Stock

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3,209

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Kepictronics

USA . 3,000 parts In-Stock

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3,000

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A-Z Elektronik GmbH

Germany . 2,700 parts In-Stock

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2,700

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Supply Digital

USA . 2,005 parts In-Stock

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2,005

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Alle Elektronik GmbH

Germany . 1,800 parts In-Stock

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1,800

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UHIMA Technologies

Türkiye . 705 parts In-Stock

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705

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Overview

Discover the power of the FDC2612 by Onsemi, a top-of-the-line Small Signal Field Effect Transistor that offers unparalleled quality and reliability. With its N-CHANNEL design and built-in diode, this transistor is perfect for switching applications. Onsemi's reputation for excellence ensures that you are getting a product that exceeds industry standards. Whether you're working on a project that requires precision and efficiency or looking to upgrade your electronics, the FDC2612 delivers exceptional performance and value. Trust Onsemi to provide you with the best in semiconductor technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher electron mobility and faster switching speeds compared to P-channel transistors, making this product suitable for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode helps with reverse voltage protection and can simplify circuit design by eliminating the need for an external diode.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and high efficiency in switching circuits.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving space and making this transistor suitable for compact electronic devices.

Maximum Power Dissipation (Abs): 0.8 W

With a high maximum power dissipation, this transistor can handle a significant amount of power without overheating, ensuring reliable performance in demanding applications.

Maximum Drain-Source On Resistance: 0.725 ohm

The low on-resistance of this transistor results in minimal power loss and allows for efficient conduction, making it ideal for high-current applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising its performance, making it suitable for a wide range of operating conditions.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDC2612 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

200 V

Maximum Drain Current (Abs) (ID):

1.1 A

Maximum Drain Current (ID):

1.1 A

Maximum Drain-Source On Resistance:

.725 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDC2612 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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