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FDC2512_NL

Fairchild Semiconductor

FDC2512_NL by Fairchild Semiconductor

FDC2512_NL by Fairchild Semiconductor is a N-CHANNEL FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 1.4A and 0.425 ohm On Resistance, operating in ENHANCEMENT MODE at up to 150°C. This PLASTIC/EPOXY transistor comes in GULL WING package style with 6 terminals for surface mount installation.

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Overview

Discover the high-quality FDC2512_NL Small Signal Field Effect Transistor by Fairchild Semiconductor, a top-tier manufacturer known for its reliable and innovative products. Ideal for switching applications, this N-CHANNEL transistor offers enhanced performance with a built-in diode, providing customers with superior functionality and efficiency. With a maximum DS breakdown voltage of 150V and a compact rectangular package style, this transistor is perfect for a variety of electronic devices. Trust Fairchild Semiconductor for cutting-edge technology and exceptional value in every product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

Allows for efficient switching of currents in electronic circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by including a built-in diode, reducing the need for additional components.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Surface Mount: YES

Enables easy and compact integration onto circuit boards, saving space and simplifying assembly.

Minimum DS Breakdown Voltage: 150 V

Provides a safety margin for high voltage applications, ensuring reliable operation under varying conditions.

Package Shape: RECTANGULAR

Facilitates easy installation on circuit boards and efficient use of available space within electronic devices.

Terminal Form: GULL WING

Offers secure connection points for soldering, enhancing the overall reliability of the component.

Operating Mode: ENHANCEMENT MODE

Allows for precise control of the transistor's conductivity, enabling efficient switching and power management.

Maximum Drain Current (Abs) (ID): 1.4 A

Supports high current flows, making it suitable for various applications requiring robust performance.

No. of Terminals: 6

Provides multiple connection points for versatile integration into circuit designs.

Maximum Power Dissipation (Abs): 0.8 W

Ensures efficient heat dissipation to maintain the component's performance and reliability.

Package Style (Meter): SMALL OUTLINE

Compact form factor for space-constrained applications, while still offering all necessary functionality.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Reliable and commonly used technology for field effect transistors, ensuring consistent performance.

Maximum Operating Temperature: 150 °C

Suits a wide range of operating environments, providing flexibility in application scenarios.

Transistor Element Material: SILICON

Offers high performance and reliability, commonly used in semiconductor components.

Terminal Finish: MATTE TIN

Provides a corrosion-resistant finish for long-lasting connection points.

Maximum Drain-Source On Resistance: 0.425 ohm

Low on-resistance for efficient power flow and minimal heat generation during operation.

Terminal Position: DUAL

Allows for flexible PCB layout options and ease of soldering during assembly.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDC2512_NL attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Minimum DS Breakdown Voltage:

150 V

Maximum Drain Current (Abs) (ID):

1.4 A

Maximum Drain Current (ID):

1.4 A

Maximum Drain-Source On Resistance:

.425 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDC2512_NL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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