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FC903

Onsemi

FC903 by Onsemi

FC903 by Onsemi is a surface mount diode with a max reverse recovery time of 0.004 us and max reverse current of 0.5 uA. It operates b/w -55 to 125 °C and has a max forward voltage of 1.2 V, making it ideal for applications requiring precise voltage regulation in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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< 1k

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Vyrian

USA . 318 parts In-Stock

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Digiode

USA . 155 parts In-Stock

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TANS Electronics

Latvia . 7,806 parts In-Stock

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SupplyDigital Components

Austria . 3,706 parts In-Stock

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Problanco Electronics

Mexico . 3,661 parts In-Stock

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Kulean Microsystems

USA . 3,065 parts In-Stock

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Corphita

USA . 1,661 parts In-Stock

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Northwest PG Solutions

USA . 1,499 parts In-Stock

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UHIMA Technologies

Türkiye . 206 parts In-Stock

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Corohmni

South Africa . 127 parts In-Stock

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Native Components

USA . 11 parts In-Stock

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Overview

Experience superior quality and reliability with the FC903 by Onsemi, a leading manufacturer in the industry of Other Function Diodes. This innovative product offers unmatched performance and efficiency, making it ideal for a wide range of applications. With a maximum reverse recovery time of 0.004 us and a maximum forward voltage of 1.2 V, customers can expect exceptional results in their projects. Invest in the FC903 today and discover the value, benefits, and advantages it brings to your work.

Feature Benefit Bullets

Surface Mount: YES

This allows for easy and convenient installation on printed circuit boards, saving time and reducing production costs.

Maximum Reverse Recovery Time: 0.004 us

The fast reverse recovery time ensures efficient switching, high performance, and minimal power loss.

Maximum Reverse Current: 0.5 uA

Low reverse current indicates better efficiency and less wasted power when the diode is not conducting.

Reverse Test Voltage: 80 V

The high reverse test voltage allows for reliable reverse operation and protection against voltage spikes.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this diode can withstand tough environmental conditions and operate reliably in various applications.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature ensures functionality in extreme cold environments, making this diode suitable for a wide range of applications.

Maximum Forward Voltage (VF): 1.2 V

The low forward voltage drop ensures efficient conduction and minimal power loss during forward bias operation.

Maximum Repetitive Peak Reverse Voltage: 85 V

The high repetitive peak reverse voltage provides protection against voltage spikes and ensures the diode can handle high reverse voltage conditions reliably.

Technical Specifications

Other Function Diodes FC903 attributes and parameters. Explore more Other Function Diodes devices from Onsemi

Specs

Maximum Forward Voltage (VF):

1.2 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Repetitive Peak Reverse Voltage:

85 V

Maximum Reverse Current:

.5 uA

Maximum Reverse Recovery Time:

.004 us

Reverse Test Voltage:

80 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Trade Compliance

FC903 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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