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CPH5871-TL-W

Onsemi

CPH5871-TL-W by Onsemi

CPH5871-TL-W by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage and 3.5A max drain current. Ideal for switching applications, it features a built-in diode, 0.052 ohm RDS(on), and operates in enhancement mode. This small outline SMD transistor has GULL WING terminals and tin bismuth finish.

Median Price

$0.172

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.140

12,000

-

-

-

$0.140

Flip Electronics (Authorized)

USA . 12,000 parts In-Stock

1+ parts

-

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12,000

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-

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Rochester

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.204

1k+ parts

$0.170

10k+ parts

$0.151

3,000

-

$0.204

$0.170

$0.151

Verical

USA . 3,000 parts In-Stock

1+ parts

-

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$0.189

3,000

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$0.189

Mouser Electronics

USA . 1,256 parts In-Stock

1+ parts

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$0.156

1,256

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$0.156

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 992 parts In-Stock

1+ parts

$0.140

100+ parts

-

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992

$0.140

-

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Digiode

USA . 1,494 parts In-Stock

1+ parts

$0.160

100+ parts

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1,494

$0.160

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Flip Electronics

USA . 12,000 parts In-Stock

1+ parts

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100+ parts

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12,000

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Distributors (Availability)

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Corohmni

South Africa . 100 parts In-Stock

1+ parts

$0.140

100+ parts

-

1k+ parts

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100

$0.140

-

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Corphita

USA . 2,327 parts In-Stock

1+ parts

$0.151

100+ parts

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2,327

$0.151

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Problanco Electronics

Mexico . 7,508 parts In-Stock

1+ parts

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100+ parts

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7,508

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Continental Prestige Electronics

USA . 3,000 parts In-Stock

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100+ parts

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$0.154

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3,000

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$0.154

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Kepictronics

USA . 3,000 parts In-Stock

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3,000

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Authorized Procurement Solutions

USA . 2,800 parts In-Stock

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2,800

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Kulean Microsystems

USA . 2,459 parts In-Stock

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2,459

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Northwest PG Solutions

USA . 2,004 parts In-Stock

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2,004

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TANS Electronics

Latvia . 1,787 parts In-Stock

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1,787

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SupplyDigital Components

Austria . 1,656 parts In-Stock

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1,656

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UHIMA Technologies

Türkiye . 473 parts In-Stock

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473

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Native Components

USA . 451 parts In-Stock

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451

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Speed Components Ltd (Excess)

Israel . 50 parts In-Stock

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50

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Overview

Enhance your electronic projects with the CPH5871-TL-W by Onsemi, a top-quality N-channel field-effect transistor designed for switching applications. With a built-in diode and a maximum drain current of 3.5 A, this small signal FET offers reliability and performance that surpasses expectations. Whether you're a hobbyist or a professional, this product's tin bismuth terminal finish and metal-oxide semiconductor technology ensure seamless integration and superior results. Trust Onsemi's expertise and elevate your designs with the CPH5871-TL-W today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

Allows for efficient operation in various electronic circuits and applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by incorporating a diode within the transistor package.

Transistor Application: SWITCHING

Ideal for high-speed switching applications due to its fast response time.

Package Shape: RECTANGULAR

Facilitates easy integration into circuit layouts and PCB designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Ensures high performance and reliability in semiconductor operations.

Maximum Drain Current (ID): 3.5 A

Capable of handling high current loads, making it suitable for power applications.

Maximum Drain-Source On Resistance: 0.052 ohm

Ensures minimal power loss and efficient operation in switching circuits.

Technical Specifications

Small Signal Field Effect Transistors (FET) CPH5871-TL-W attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

3.5 A

Maximum Drain-Source On Resistance:

.052 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

CPH5871-TL-W Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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