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BD237STU

Onsemi

BD237STU by Onsemi

BD237STU by Onsemi is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 25W, max collector-emitter voltage of 80V, and max collector current of 2A. With a min hFE of 25 and fT of 3MHz, it operates at up to 150°C making it suitable for various power control circuits.

Median Price

$0.156

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

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Flip Electronics (Authorized)

USA . 2,600 parts In-Stock

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Nova Conductors

Japan . 36 parts In-Stock

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$0.127

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36

$0.127

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Maritex

Poland . 9 parts In-Stock

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$0.185

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$0.150

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$0.108

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$0.093

9

$0.185

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$0.093

VNN

France . 33,899 parts In-Stock

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Chip Stock

USA . 7,691 parts In-Stock

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Flip Electronics

USA . 2,600 parts In-Stock

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Vyrian

USA . 2,372 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 1,920 parts In-Stock

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Digiode

USA . 1,128 parts In-Stock

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QIE Inc.

USA . 935 parts In-Stock

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Corohmni

South Africa . 249 parts In-Stock

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$0.122

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249

$0.122

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Aranea Global

USA . 100 parts In-Stock

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$0.124

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$0.119

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100

$0.124

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Continental Prestige Electronics

USA . 3,360 parts In-Stock

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$0.127

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$0.124

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Argo Parts USA

USA . 2,691 parts In-Stock

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$0.127

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$0.123

2,691

$0.127

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$0.123

Aztec Data Supply Inc.

USA . 844 parts In-Stock

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$1.600

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$1.600

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Semicontronic

India . 2,210 parts In-Stock

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$11.050

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$10.774

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$10.718

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$11.050

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Ampacity Inc.

Singapore . 2,249 parts In-Stock

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$20.050

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QUARKTWIN TECHNOLOGY LTD

USA . 22,452 parts In-Stock

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Perfect Parts

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Problanco Electronics

Mexico . 6,874 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,309 parts In-Stock

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Kulean Microsystems

USA . 6,148 parts In-Stock

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Microchip USA

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TANS Electronics

Latvia . 5,790 parts In-Stock

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Metaverse IC Inc.

Canada . 4,053 parts In-Stock

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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Corphita

USA . 2,896 parts In-Stock

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Supply Digital

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Authorized Procurement Solutions

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SupplyDigital Components

Austria . 471 parts In-Stock

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UHIMA Technologies

Türkiye . 305 parts In-Stock

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Overview

Upgrade your power management with the reliable BD237STU by Onsemi. Manufactured by a trusted industry leader, this Power Bipolar Junction Transistor offers high performance and durability for a variety of switching applications. With a maximum power dissipation of 25 W and a maximum collector current of 2 A, this NPN transistor provides exceptional value and efficiency. Trust Onsemi to deliver superior quality components that meet your power needs with ease.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications and environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, making this product versatile and widely compatible.

Configuration: SINGLE

Simplified design and easy integration into circuitry, reducing complexity and potential points of failure.

Transistor Application: SWITCHING

Optimized for fast switching speeds and efficient operation, ideal for applications requiring quick response times.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for use in demanding environments without the risk of overheating.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD237STU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD237STU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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