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BC327-025G

Onsemi

BC327-025G by Onsemi

BC327-025G by Onsemi is a PNP BJT with 3 terminals, hFE of 160, and max IC of 0.8A. Ideal for amplifier applications, it has a max VCE of 45V and operates up to 150 °C. Package style is cylindrical with through-hole terminals.

Median Price

$0.180

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 3 parts In-Stock

1+ parts

$0.558

100+ parts

-

1k+ parts

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3

$0.558

-

-

-

Rochester

USA . 109,204 parts In-Stock

1+ parts

-

100+ parts

$0.159

1k+ parts

$0.132

10k+ parts

$0.117

109,204

-

$0.159

$0.132

$0.117

DigiKey

USA . 109,204 parts In-Stock

1+ parts

-

100+ parts

-

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$0.200

109,204

-

-

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$0.200

Farnell

UK . 109,204 parts In-Stock

1+ parts

-

100+ parts

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$0.144

109,204

-

-

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$0.144

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,130 parts In-Stock

1+ parts

$0.124

100+ parts

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1,130

$0.124

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Vyrian

USA . 2,222 parts In-Stock

1+ parts

$0.130

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-

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2,222

$0.130

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DigiKey Marketplace

USA . 109,204 parts In-Stock

1+ parts

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109,204

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Chip Stock

USA . 36,000 parts In-Stock

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36,000

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EMSNET

USA . 4,935 parts In-Stock

1+ parts

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4,935

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ComSIT Distribution GmbH

Germany . 4,522 parts In-Stock

1+ parts

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4,522

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Martec Srl

Italy . 35 parts In-Stock

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35

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Distributors (Availability)

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Corphita

USA . 2,037 parts In-Stock

1+ parts

$0.117

100+ parts

-

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2,037

$0.117

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Corohmni

South Africa . 426 parts In-Stock

1+ parts

$0.130

100+ parts

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426

$0.130

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Native Components

USA . 255 parts In-Stock

1+ parts

$5.980

100+ parts

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255

$5.980

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Continental Prestige Electronics

USA . 109,204 parts In-Stock

1+ parts

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100+ parts

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$0.117

10k+ parts

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109,204

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$0.117

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Perfect Parts

USA . 28,868 parts In-Stock

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28,868

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Kepictronics

USA . 8,888 parts In-Stock

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8,888

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Problanco Electronics

Mexico . 6,069 parts In-Stock

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6,069

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A-Z Elektronik GmbH

Germany . 5,975 parts In-Stock

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5,975

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TANS Electronics

Latvia . 4,952 parts In-Stock

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4,952

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Alle Elektronik GmbH

Germany . 3,983 parts In-Stock

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3,983

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Northwest PG Solutions

USA . 2,175 parts In-Stock

1+ parts

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$5.860

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2,175

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$5.860

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SupplyDigital Components

Austria . 1,555 parts In-Stock

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1,555

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UHIMA Technologies

Türkiye . 555 parts In-Stock

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555

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Kulean Microsystems

USA . 303 parts In-Stock

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303

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GreenTree Electronics

Israel . 97 parts In-Stock

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97

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Overview

Enhance your electronic projects with the BC327-025G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) that delivers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this PNP transistor is perfect for amplifier applications. With a maximum power dissipation of 1.5 W and a minimum DC current gain of 160, this transistor offers unmatched value and benefits to customers looking for top-notch components for their designs. Upgrade your projects with the BC327-025G and experience superior quality and performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and thermal properties for reliable performance.

Polarity or Channel Type: PNP

Allows for easy integration into PNP amplifier circuits.

Configuration: SINGLE

Simplifies circuit design and reduces complexity.

Transistor Application: AMPLIFIER

Designed specifically for amplification tasks, ensuring optimal performance.

Package Shape: ROUND

Facilitates easy mounting and positioning in circuits.

Terminal Form: THROUGH-HOLE

Enables secure and stable connection on PCBs.

Maximum Power Dissipation (Abs): 1.5 W

Can handle high power levels without overheating, ensuring reliability.

Package Style (Meter): CYLINDRICAL

Fits well in standard cylindrical packages for convenience in assembly.

Minimum DC Current Gain (hFE): 160

Provides high current gain for efficient amplification.

Maximum Operating Temperature: 150 °C

Can operate reliably at high temperatures without performance degradation.

Maximum Collector-Emitter Voltage: 45 V

Offers high voltage tolerance for various application requirements.

Transistor Element Material: SILICON

Provides reliable performance and durability.

Maximum Collector Current (IC): 0.8 A

Can handle moderate current levels for amplification tasks.

Terminal Finish: TIN SILVER COPPER

Provides good conductivity and corrosion resistance for long-term reliability.

Terminal Position: BOTTOM

Facilitates easy soldering and connection on PCBs.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during manufacturing processes.

Nominal Transition Frequency (fT): 260 MHz

Provides high frequency response for demanding amplifier applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC327-025G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

160

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC327-025G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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