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74LVC32ADR2G

Onsemi

74LVC32ADR2G by Onsemi

74LVC32ADR2G by Onsemi is a CMOS Logic Gates IC with 4 functions and 2 inputs. It operates at a supply voltage range of 1.2V to 3.6V, offering a propagation delay of 10.4ns. Ideal for automotive applications due to its small outline package and wide temperature range from -40 °C to 125°C.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 6,213 parts In-Stock

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Digiode

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Native Components

USA . 942 parts In-Stock

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Northwest PG Solutions

USA . 1,151 parts In-Stock

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AZTECH Wire

Italy . 915 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 13,885 parts In-Stock

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Microchip USA

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SupplyDigital Components

Austria . 5,022 parts In-Stock

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TANS Electronics

Latvia . 3,551 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

Mexico . 1,331 parts In-Stock

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Corphita

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Corohmni

South Africa . 302 parts In-Stock

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UHIMA Technologies

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Overview

Looking for high-quality logic gates that offer exceptional performance and reliability? Look no further than the 74LVC32ADR2G by Onsemi. With its advanced technology and automotive-grade temperature grade, this product is perfect for a wide range of applications. From automotive electronics to consumer devices, this logic gate ensures seamless operation and precise functionality. Trust Onsemi's reputation for excellence and choose the 74LVC32ADR2G for all your logic gate needs. Unlock the value and benefits this product offers and experience the difference in your designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material makes the package durable and lightweight, ideal for portable and rugged applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving space and reducing manufacturing costs.

No. of Functions: 4

Having 4 functions in one chip increases integration and reduces the number of components needed in a circuit design.

No. of Inputs: 2

2 inputs provide flexibility in logic operations and can be used in various simple or complex digital circuits.

Propagtion Delay: 10.4 ns

Low propagation delay ensures quick response time in signal processing, making this logic gate suitable for high-speed applications.

Technical Specifications

Logic Gates 74LVC32ADR2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Additional Features:

OPERATING SUPPLY VOLTAGE 1.65 TO 3.6 V

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e3

Length:

8.65 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

1

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Propagation Delay (tpd):

10.4 ns

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

1.2 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

74LVC32ADR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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