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74HCT08DR2G

Onsemi

74HCT08DR2G by Onsemi

74HCT08DR2G by Onsemi is a CMOS logic gate with 4 functions and 2 inputs. It operates at a supply voltage of 5V, with a propagation delay of 22ns. Ideal for military-grade applications due to its small outline package and dual terminal position.

Median Price

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Lifecycle Status

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6

In-Stock Inventory

1k+

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Chip Stock

USA . 48,800 parts In-Stock

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Vyrian

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Digiode

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Prism Electronics

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Nova Conductors

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AZTECH Wire

Italy . 557 parts In-Stock

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$10.729

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Ampacity Inc.

Singapore . 556 parts In-Stock

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SupplyDigital Components

Austria . 6,477 parts In-Stock

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Problanco Electronics

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Corphita

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Kulean Microsystems

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TANS Electronics

Latvia . 356 parts In-Stock

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Microchip USA

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Bastille Electronics

Australia . 79 parts In-Stock

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Overview

Experience superior performance and reliability with the Onsemi 74HCT08DR2G Logic Gates. Manufactured by a trusted industry leader, this product offers exceptional quality and precision engineering. Perfect for a variety of applications, this logic gate delivers fast propagation delays and operates at a wide range of temperatures. With a compact design and high durability, this product provides unmatched value and efficiency to customers. Upgrade your electronic projects with the Onsemi 74HCT08DR2G and enjoy seamless functionality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable.

Propagation Delay At Nominal Supply: 22 ns

Low propagation delay ensures fast operation and high-speed performance.

Surface Mount: YES

Surface mount technology allows for easy installation and space-saving on circuit boards.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard 5V supply voltage commonly used in electronic circuits.

Power Supplies (V): 5

Consistent power supply at 5V ensures stable operation.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows for reliable performance in various environments.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, ideal for digital circuits.

Technical Specifications

Logic Gates 74HCT08DR2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

HCT

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e3

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Propagation Delay At Nominal Supply:

22 ns

Propagation Delay (tpd):

22 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.75 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

3.9 mm

Trade Compliance

74HCT08DR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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