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74HC132DR2G

Onsemi

74HC132DR2G by Onsemi

74HC132DR2G by Onsemi is a CMOS Logic Gates IC with 4 functions and 2 inputs. It has a propagation delay of 38 ns at Vsup of 4.5V, making it suitable for fast response applications. With a MILITARY temperature grade and Schmitt Trigger feature, it is ideal for high-reliability circuits in harsh environments.

Median Price

$0.119

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 410 parts In-Stock

1+ parts

-

100+ parts

$0.119

1k+ parts

$0.099

10k+ parts

$0.088

410

-

$0.119

$0.099

$0.088

Distributors (In-Stock)

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Digiode

USA . 2,020 parts In-Stock

1+ parts

$0.093

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2,020

$0.093

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Chip Stock

USA . 160,010 parts In-Stock

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160,010

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Vyrian

USA . 3,756 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 2,070 parts In-Stock

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$0.088

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2,070

$0.088

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Corohmni

South Africa . 62 parts In-Stock

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$0.098

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62

$0.098

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AZTECH Wire

Italy . 505 parts In-Stock

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$10.460

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505

$10.460

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Problanco Electronics

Mexico . 8,067 parts In-Stock

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Kepictronics

USA . 7,500 parts In-Stock

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7,500

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Microchip USA

USA . 7,287 parts In-Stock

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TANS Electronics

Latvia . 7,260 parts In-Stock

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Kulean Microsystems

USA . 6,959 parts In-Stock

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SupplyDigital Components

Austria . 6,793 parts In-Stock

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Perfect Parts

USA . 2,351 parts In-Stock

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Northwest PG Solutions

USA . 774 parts In-Stock

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UHIMA Technologies

Türkiye . 672 parts In-Stock

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Native Components

USA . 540 parts In-Stock

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Overview

Looking for high-quality logic gates that deliver exceptional performance? Look no further than the 74HC132DR2G by Onsemi. With a reputation for excellence in semiconductor manufacturing, Onsemi's product offers fast propagation delay and versatile applications in various electronic circuits. Whether you're working on a DIY project or industrial automation, this logic gate guarantees reliable operation and seamless integration. Trust Onsemi for cutting-edge technology and unmatched value in every component. Upgrade your designs with the 74HC132DR2G and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package lightweight and durable, allowing for easy handling and protection of the internal components.

Propagation Delay At Nominal Supply: 38 ns

The fast propagation delay ensures quick response times in processing signals, making this product suitable for applications requiring high-speed operation.

Surface Mount: YES

Being surface mountable saves space on the PCB, making it ideal for compact designs and applications with limited board space.

Nominal Supply Voltage / Vsup (V): 4.5

The 4.5V supply voltage is a common and stable voltage level, making it compatible with a wide range of systems and applications.

Temperature Grade: MILITARY

The military-grade temperature rating ensures the product can withstand harsh environmental conditions, making it suitable for rugged applications and environments.

Schmitt Trigger: YES

The presence of a Schmitt trigger allows for hysteresis in the input signal, improving noise immunity and signal integrity in noisy environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable in various applications.

Technical Specifications

Logic Gates 74HC132DR2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

HC/UH

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e3

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6

Propagation Delay At Nominal Supply:

38 ns

Propagation Delay (tpd):

190 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.75 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

4.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

3.9 mm

Trade Compliance

74HC132DR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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