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74HC08DR2G

Onsemi

74HC08DR2G by Onsemi

74HC08DR2G by Onsemi is a logic gate with 4 functions and 2 inputs. It has a propagation delay of 22 ns at a supply voltage of 3V, making it suitable for high-speed applications. With a small outline package style and surface mount capability, it is ideal for compact electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Velocity Electronics

USA . 30,000 parts In-Stock

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Vyrian

USA . 2,853 parts In-Stock

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Digiode

USA . 2,056 parts In-Stock

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Speed Components Ltd

Israel . 392 parts In-Stock

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NexGen Digital

USA . 100 parts In-Stock

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100

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Native Components

USA . 73 parts In-Stock

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$2.070

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73

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Northwest PG Solutions

USA . 1,178 parts In-Stock

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$2.277

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AZTECH Wire

Italy . 357 parts In-Stock

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$15.430

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Kulean Microsystems

USA . 7,470 parts In-Stock

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TANS Electronics

Latvia . 5,411 parts In-Stock

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SupplyDigital Components

Austria . 4,748 parts In-Stock

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Problanco Electronics

Mexico . 4,455 parts In-Stock

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Perfect Parts

USA . 2,877 parts In-Stock

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UHIMA Technologies

Türkiye . 833 parts In-Stock

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Corphita

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Microchip USA

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Corohmni

South Africa . 225 parts In-Stock

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Overview

Unlock the power of seamless logic operations with the 74HC08DR2G by Onsemi. Crafted with precision and quality, Onsemi is a leading manufacturer in the industry, ensuring reliability and performance in every product. As part of the Logic Gates category, this versatile component offers unmatched flexibility for various applications. With an emphasis on efficiency and speed, customers can trust in the value and benefits that the 74HC08DR2G provides, making it an essential choice for your next project. Elevate your designs with Onsemi's exceptional technology and experience the difference.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the logic gates, making them suitable for various environments.

Propagation Delay At Nominal Supply: 22 ns

Low propagation delay ensures fast processing and response times, making this product efficient for time-sensitive applications.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on PCB boards, saving space and simplifying assembly processes.

No. of Functions: 4

Having multiple functions in a single device increases versatility and flexibility in circuit design.

Nominal Supply Voltage / Vsup (V): 3

Operating at a standard 3V supply voltage ensures compatibility with various electronic systems and simplifies power requirements.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions and prolonged use without overheating.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the logic gates energy-efficient and reliable for long-term use.

Technical Specifications

Logic Gates 74HC08DR2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

HC/UH

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e3

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6

Propagation Delay At Nominal Supply:

22 ns

Propagation Delay (tpd):

110 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.75 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

3.9 mm

Trade Compliance

74HC08DR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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